AAAAAA
Results:
1-8
|
Results: 8
Authors:
Grandidier, B
Nys, JP
Stievenard, D
Krzeminski, C
Delerue, C
Frere, P
Blanchard, P
Roncali, J
Citation: B. Grandidier et al., Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface, SURF SCI, 473(1-2), 2001, pp. 1-7
Authors:
Grandidier, B
Silvestre, S
Nys, JP
Melin, T
Bernard, D
Stievenard, D
Constant, E
Chevallier, J
Citation: B. Grandidier et al., H-Si doping profile in GaAs by scanning tunneling microscopy, APPL PHYS L, 79(20), 2001, pp. 3278-3280
Authors:
Grandidier, B
Niquet, YM
Legrand, B
Nys, JP
Priester, C
Stievenard, D
Gerard, JM
Thierry-Mieg, V
Citation: B. Grandidier et al., Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes, PHYS REV L, 85(5), 2000, pp. 1068-1071
Authors:
Grandidier, B
Nys, JP
Delerue, C
Stievenard, D
Higo, Y
Tanaka, M
Citation: B. Grandidier et al., Atomic-scale study of GaMnAs/GaAs layers, APPL PHYS L, 77(24), 2000, pp. 4001-4003
Authors:
Legrand, B
Agache, V
Nys, JP
Senez, V
Stievenard, D
Citation: B. Legrand et al., Formation of silicon islands on a silicon on insulator substrate upon thermal annealing, APPL PHYS L, 76(22), 2000, pp. 3271-3273
Authors:
Bourgoin, JC
Hammadi, H
Stellmacher, M
Nagle, J
Grandidier, B
Stievenard, D
Nys, JP
Delerue, C
Lannoo, M
Citation: Jc. Bourgoin et al., As antisite incorporation in epitaxial growth of GaAs, PHYSICA B, 274, 1999, pp. 725-728
Authors:
Syrykh, C
Nys, JP
Legrand, B
Stievenard, D
Citation: C. Syrykh et al., Nanoscale desorption of H-passivated Si(100)-2x1 surfaces using an ultrahigh vacuum scanning tunneling microscope, J APPL PHYS, 85(7), 1999, pp. 3887-3892
Authors:
Legrand, B
Nys, JP
Grandidier, B
Stievenard, D
Lemaitre, A
Gerard, JM
Thierry-Mieg, V
Citation: B. Legrand et al., Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy, APPL PHYS L, 74(18), 1999, pp. 2608-2610
Risultati:
1-8
|