AAAAAA
Results:
1-8
|
Results: 8
Authors:
OHZONE T
MIYAKAWA T
MATSUDA T
YABU T
ODANAKA S
Citation: T. Ohzone et al., INFLUENCE OF ASYMMETRIC SYMMETRIC SOURCE/DRAIN REGION ON ASYMMETRY AND MISMATCH OF CMOSFETS AND CIRCUIT PERFORMANCE/, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 529-537
Authors:
IWASAKI S
ODANAKA S
MITSUI T
KITAMURA M
Citation: S. Iwasaki et al., A PROPOSED ALGORITHM FOR ADAPTIVE COMPUTER-TOMOGRAPHY, Applied radiation and isotopes, 48(10-12), 1997, pp. 1451-1458
Authors:
ODANAKA S
HIROKI A
Citation: S. Odanaka et A. Hiroki, POTENTIAL DESIGN AND TRANSPORT PROPERTY OF 0.1-MU-M MOSFET WITH ASYMMETRIC CHANNEL PROFILE, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 595-600
Authors:
HORI A
HIROKI A
AKAMATSU KM
ODANAKA S
Citation: A. Hori et al., EXPERIMENTAL-STUDY OF IMPACT IONIZATION PHENOMENA IN SUB-0.1 MU-M SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS), JPN J A P 1, 35(2B), 1996, pp. 882-886
Authors:
ODANAKA S
NOGI T
Citation: S. Odanaka et T. Nogi, MASSIVELY-PARALLEL COMPUTATION USING A SPLITTING-UP OPERATOR METHOD FOR 3-DIMENSIONAL DEVICE SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(7), 1995, pp. 824-832
Authors:
OHZONE T
YAMAMOTO M
IWATA H
ODANAKA S
Citation: T. Ohzone et al., ELECTRICAL CHARACTERISTICS OF SCALED CMOSFETS WITH SOURCE DRAIN REGIONS FABRICATED BY 7-DEGREES AND 0-DEGREES TILT-ANGLE IMPLANTATIONS/, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 70-77
Authors:
OHZONE T
IWATA H
URAOKA Y
ODANAKA S
Citation: T. Ohzone et al., PHOTON-ENERGY DISTRIBUTION OF HOT-CARRIER PHOTOEMISSION FROM LOCOS AND TRENCH-ISOLATED MOSFETS, Solid-state electronics, 37(7), 1994, pp. 1421-1428
Authors:
OHZONE T
IWATA H
URAOKA Y
ODANAKA S
Citation: T. Ohzone et al., A 2-DIMENSIONAL ANALYSIS OF HOT-CARRIER PHOTOEMISSION FROM LOCOS AND TRENCH-ISOLATED MOSFETS, IEICE transactions on electronics, E76C(11), 1993, pp. 1673-1682
Risultati:
1-8
|