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Results:
1-12
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Results: 12
Authors:
IM JS
KOLLMER H
OFF J
SOHMER A
SCHOLZ F
HANGLEITER A
Citation: Js. Im et al., REDUCTION OF OSCILLATOR STRENGTH DUE TO PIEZOELECTRIC FIELDS IN GAN ALXGA1-XN QUANTUM-WELLS/, Physical review. B, Condensed matter, 57(16), 1998, pp. 9435-9438
Authors:
SCHOLZ F
OFF J
SOHMER A
SYGANOW V
DORNEN A
AMBACHER O
Citation: F. Scholz et al., MOVPE OF GAINN HETEROSTRUCTURES AND QUANTUM-WELLS, Journal of crystal growth, 190, 1998, pp. 8-12
Authors:
KOSCHNICK FK
MICHAEL K
SPAETH JM
BEAUMONT B
GIBART P
OFF J
SOHMER A
SCHOLZ F
Citation: Fk. Koschnick et al., INVESTIGATIONS OF UNDOPED AND MG-DOPED WURTZITE GAN WITH LUMINESCENCE-DETECTED PARAMAGNETIC-RESONANCE IN THE 4 MM BAND, Journal of crystal growth, 190, 1998, pp. 561-565
Authors:
IM JS
HEPPEL S
KOLLMER H
SOHMER A
OFF J
SCHOLZ F
HANGLEITER A
Citation: Js. Im et al., EVIDENCE FOR QUANTUM-DOT-LIKE STATES IN GAINN GAN QUANTUM-WELLS/, Journal of crystal growth, 190, 1998, pp. 597-600
Authors:
KLOSE M
WIESER N
ROHR GC
DASSOW R
SCHOLZ F
OFF J
Citation: M. Klose et al., STRAIN INVESTIGATIONS OF WURTZITE GAN BY RAMAN PHONON DIAGNOSTICS WITH PHOTOLUMINESCENCE SUPPLEMENT, Journal of crystal growth, 190, 1998, pp. 634-638
Authors:
WIESER N
KLOSE M
DASSOW R
SCHOLZ F
OFF J
Citation: N. Wieser et al., RAMAN STUDIES OF LONGITUDINAL OPTICAL PHONON-PLASMON COUPLING IN GAN LAYERS, Journal of crystal growth, 190, 1998, pp. 661-665
ON THE ROLE OF THERMAL STRAIN FOR MICRO-RAMAN DETERMINATION OF CARRIER CONCENTRATIONS IN MOVPE-N-GAN
Authors:
WIESER N
KLOSE M
DASSOW R
ROHR GC
SCHOLZ F
OFF J
Citation: N. Wieser et al., ON THE ROLE OF THERMAL STRAIN FOR MICRO-RAMAN DETERMINATION OF CARRIER CONCENTRATIONS IN MOVPE-N-GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 88-92
Authors:
BINET F
DUBOZ JY
LAURENT N
BONNAT C
COLLOT P
HANAUER F
BRIOT O
GIL B
SCHOLZ F
OFF J
SOHMER A
Citation: F. Binet et al., OPTICAL-PUMPING IN NITRIDE CAVITIES WITH ETCHED MIRROR FACETS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 183-187
Authors:
SCHOLZ F
SOHMER A
OFF J
SYGANOW V
DORNEN A
IM JS
HANGLEITER A
LAKNER H
Citation: F. Scholz et al., IN INCORPORATION EFFICIENCY AND COMPOSITION FLUCTUATIONS IN MOVPE GROWN GAINN GAN HETERO STRUCTURES AND QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 238-244
Authors:
GFRORER O
OFF J
SOHMER A
SCHOLZ F
HANGLEITER A
Citation: O. Gfrorer et al., INVESTIGATIONS OF SELECTIVELY GROWN GAN INGAN EPITAXIAL LAYERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 268-271
Authors:
DUBOZ JY
BINET F
DOLFI D
LAURENT N
SCHOLZ F
OFF J
SOHMER A
BRIOT O
GIL B
Citation: Jy. Duboz et al., DIFFUSION LENGTH OF PHOTOEXCITED CARRIERS IN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 289-295
Authors:
LAKNER H
BROCKT G
MENDORF C
RADEFELD A
SCHOLZ F
HARLE V
OFF J
SOHMER A
Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE-GROWN (AL,IN,GA)N HETEROSTRUCTURES BY QUANTITATIVE ANALYTICAL ELECTRON-MICROSCOPY, Journal of electronic materials, 26(10), 1997, pp. 1103-1108
Risultati:
1-12
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