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Results: 1-7 |
Results: 7
DOME-TO-PYRAMID TRANSITION INDUCED BY ALLOYING OF GE ISLANDS ON SI(001)
Authors: KAMINS TI MEDEIROSRIBEIRO G OHLBERG DAA WILLIAMS RS
Citation: Ti. Kamins et al., DOME-TO-PYRAMID TRANSITION INDUCED BY ALLOYING OF GE ISLANDS ON SI(001), Applied physics A: Materials science & processing, 67(6), 1998, pp. 727-730
ANNEALING OF GE NANOCRYSTALS ON SI(001) AT 550-DEGREES-C - METASTABILITY OF HUTS AND THE STABILITY OF PYRAMIDS AND DOMES
Authors: MEDEIROSRIBEIRO G KAMINS TI OHLBERG DAA WILLIAMS RS
Citation: G. Medeirosribeiro et al., ANNEALING OF GE NANOCRYSTALS ON SI(001) AT 550-DEGREES-C - METASTABILITY OF HUTS AND THE STABILITY OF PYRAMIDS AND DOMES, Physical review. B, Condensed matter, 58(7), 1998, pp. 3533-3536
SHAPE TRANSITION OF GERMANIUM NANOCRYSTALS ON A SILICON(001) SURFACE FROM PYRAMIDS TO DOMES
Authors: MEDEIROSRIBEIRO G BRATKOVSKI AM KAMINS TI OHLBERG DAA WILLIAMS RS
Citation: G. Medeirosribeiro et al., SHAPE TRANSITION OF GERMANIUM NANOCRYSTALS ON A SILICON(001) SURFACE FROM PYRAMIDS TO DOMES, Science, 279(5349), 1998, pp. 353-355
ENHANCED FIELD-EMISSION OF DIAMOND-LIKE CARBON-FILMS DUE TO CESIATION
Authors: PAN LS FELTER TE OHLBERG DAA HSU WL
Citation: Ls. Pan et al., ENHANCED FIELD-EMISSION OF DIAMOND-LIKE CARBON-FILMS DUE TO CESIATION, Journal of applied physics, 82(5), 1997, pp. 2624-2630
FABRICATION AND TESTING OF VERTICAL METAL EDGE EMITTERS WITH WELL-DEFINED GATE TO EMITTER SEPARATION
Authors: FLEMING JG OHLBERG DAA FELTER T MALINOWSKI M
Citation: Jg. Fleming et al., FABRICATION AND TESTING OF VERTICAL METAL EDGE EMITTERS WITH WELL-DEFINED GATE TO EMITTER SEPARATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1958-1962
TIME-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER (VOL 62, PG2965, 1993)/
Authors: TALIN AA OHLBERG DAA WILLIAMS RS SULLIVAN P KOUTSELAS I WILLIAMS B KAVANAGH KL
Citation: Aa. Talin et al., TIME-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER (VOL 62, PG2965, 1993)/, Applied physics letters, 64(4), 1994, pp. 529-529
TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER/
Authors: TALIN AA OHLBERG DAA WILLIAMS RS SULLIVAN P KOUTSELAS I WILLIAMS B KAVANAGH KL
Citation: Aa. Talin et al., TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER/, Applied physics letters, 62(23), 1993, pp. 2965-2966
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