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Results: 4

Authors: OKHONIN S FAZAN P
Citation: S. Okhonin et P. Fazan, ORIGIN OF THE CHARGE TO BREAKDOWN DISTRIBUTIONS IN THIN SILICON DIOXIDE FILMS, Applied physics letters, 73(16), 1998, pp. 2343-2344

Authors: OKHONIN S HESSLER T DUTOIT M
Citation: S. Okhonin et al., RELATIONSHIP BETWEEN PROFILE OF STRESS-GENERATED INTERFACE TRAPS AND DEGRADATION OF SUBMICRON LDD MOSFET, Microelectronics and reliability, 36(11-12), 1996, pp. 1671-1674

Authors: OKHONIN S HESSLER T DUTOIT M
Citation: S. Okhonin et al., COMPARISON OF GATE-INDUCED DRAIN LEAKAGE AND CHARGE-PUMPING MEASUREMENTS FOR DETERMINING LATERAL INTERFACE-TRAP PROFILES IN ELECTRICALLY STRESSED MOSFETS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 605-612

Authors: OKHONIN S HESSLER T DUTOIT M
Citation: S. Okhonin et al., SPATIAL-DISTRIBUTION OF INTERFACE TRAPS AFTER HOT-CARRIER STRESS FROMFORWARD GIDL MEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 261-264
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