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Results:
1-16
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Results: 16
Authors:
RYSKIN AI
SHCHEULIN AS
ONOPKO DE
Citation: Ai. Ryskin et al., DX-CENTERS IN IONIC SEMICONDUCTOR CDF2-GA, Physical review letters, 80(13), 1998, pp. 2949-2952
Authors:
SHCHEULIN AS
ONOPKO DE
RYSKIN AI
Citation: As. Shcheulin et al., ELECTRONIC LEVEL DIAGRAM AND STRUCTURE OF METASTABLE CENTERS IN CDF2-GA AND CDF2-IN SEMICONDUCTING CRYSTALS, Physics of the solid state, 39(12), 1997, pp. 1906-1911
Authors:
ONOPKO DE
RYSKIN AI
BAGRAEV NT
Citation: De. Onopko et al., ELECTRON-STRUCTURAL METASTABILITY OF CATIONIC DONOR CENTERS IN GAAS, Semiconductors, 31(11), 1997, pp. 1128-1131
Authors:
BAGRAEV NT
ONOPKO DE
RYSKIN AI
KARPOV YA
Citation: Nt. Bagraev et al., DEEP ERBIUM CENTERS IN SILICON .1. THEORY, Semiconductors, 30(10), 1996, pp. 967-969
Authors:
BAGRAEV NT
ONOPKO DE
RYSKIN AI
KARPOV YA
Citation: Nt. Bagraev et al., DEEP ERBIUM CENTERS IN SILICON .2. EXPERIMENT, Semiconductors, 30(10), 1996, pp. 970-974
Authors:
ONOPKO DE
RYSKIN AI
BAGRAEV NT
Citation: De. Onopko et al., CHEMICAL BONDING AND STRUCTURAL DISTORTIONS IN SILICON DOPED WITH NONTRANSITION ELEMENTS, Semiconductors, 30(1), 1996, pp. 82-87
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, RECONSTRUCTING IMPURE CENTERS IN COMPOUND S(II-VI), Fizika tverdogo tela, 38(3), 1996, pp. 689-701
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, DX AND A CENTERS IN II-VI COMPOUNDS, Physics letters. A, 208(3), 1995, pp. 244-250
Authors:
ONOPKO DE
BAGRAEV NT
RYSKIN AI
Citation: De. Onopko et al., THE SI, ER CRYSTAL - MODEL AND EXCITATION MECHANISM OF THE ER-O CENTER, Physics letters. A, 198(1), 1995, pp. 58-64
Authors:
ONOPKO DE
BAGRAEV NT
RYSKIN AI
Citation: De. Onopko et al., CHEMICAL-BONDS AND RECONSTRUCTED STATES O F DOPED CENTERS IN SEMICONDUCTORS, Fizika tverdogo tela, 37(8), 1995, pp. 2376-2397
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, A-CENTERS IN ZINC CHALCOGENIDE CRYSTALS, Optika i spektroskopia, 79(5), 1995, pp. 767-772
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, ELECTRONIC-STRUCTURE OF A DEEP IMPURITY C ENTER IN A GAP-YB CRYSTAL, Optika i spektroskopia, 76(5), 1994, pp. 751-756
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, USE OF THE CLUSTER APPROXIMATION IN THE STUDY OF DOPED SILICON-CRYSTALS, Semiconductors, 27(8), 1993, pp. 751-753
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, POSSIBLE CHARGE STATES OF TRANSITION-META L IMPURITIES IN METALS AND CRYSTALS, Optika i spektroskopia, 75(6), 1993, pp. 1255-1261
Authors:
ONOPKO DE
RYSKIN AI
Citation: De. Onopko et Ai. Ryskin, USE OF CLUSTER APPROACH FOR STUDYING III- V AND II-VI DOPED CRYSTALS, Optika i spektroskopia, 75(5), 1993, pp. 1009-1015
Authors:
ONOPKO DE
Citation: De. Onopko, CLUSTER APPROXIMATION APPLIED FOR CALCULA TION OF IDEAL CRYSTAL ENERGY PARAMETERS, Optika i spektroskopia, 74(6), 1993, pp. 1105-1108
Risultati:
1-16
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