Authors: OOBO T TAKEMURA R SATO K SUHARA M MIYAMOTO Y FURUYA K

Citation: T. Oobo et al., EFFECT OF SPACER LAYER THICKNESS ON ENERGY-LEVEL WIDTH NARROWING IN GAINAS INP RESONANT-TUNNELING DIODES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY/, JPN J A P 1, 37(2), 1998, pp. 445-449

Authors: OOBO T TAKEMURA R SUHARA M MIYAMOTO Y FURUYA K

Citation: T. Oobo et al., HIGH PEAK-TO-VALLEY CURRENT RATIO GAINAS GAINP RESONANT-TUNNELING DIODES/, JPN J A P 1, 36(8), 1997, pp. 5079-5080

Authors: TAKEMURA R SUHARA M OOBO T MIYAMOTO Y FURUYA K

Citation: R. Takemura et al., CHARACTERIZATION OF GAINAS INP TRIPLE-BARRIER RESONANT-TUNNELING DIODES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY FOR HIGH-TEMPERATURE ESTIMATION OF PHASE COHERENT LENGTH OF ELECTRONS/, JPN J A P 1, 36(3B), 1997, pp. 1846-1848