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Results: 26-40/40
Authors:
ZINOVEV NN
ANDRIANOV AV
AVERBUKH BY
YAROSHETSKII ID
CHENG TS
JENKINS LC
HOOPER SE
FOXON CT
ORTON JW
Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES, Semiconductor science and technology, 10(8), 1995, pp. 1117-1121
Authors:
ORTON JW
Citation: Jw. Orton, ACCEPTOR BINDING-ENERGY IN GAN AND RELATED ALLOYS, Semiconductor science and technology, 10(1), 1995, pp. 101-104
Authors:
HOOPER SE
FOXON CT
CHENG TS
JENKINS LC
LACKLISON DE
ORTON JW
BESTWICK T
KEAN A
DAWSON M
DUGGAN G
Citation: Se. Hooper et al., SOME ASPECTS OF GAN GROWTH ON GAAS(100) SUBSTRATES USING MOLECULAR-BEAM EPITAXY WITH AN RF ACTIVATED NITROGEN-PLASMA SOURCE, Journal of crystal growth, 155(3-4), 1995, pp. 157-163
Authors:
FOXON CT
CHENG TS
NOVIKOV SV
LACKLISON DE
JENKINS LC
JOHNSTON D
ORTON JW
HOOPER SE
BABAALI N
TANSLEY TL
TRETYAKOV VV
Citation: Ct. Foxon et al., THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES, Journal of crystal growth, 150(1-4), 1995, pp. 892-896
Authors:
NOVIKOV SV
FOXON CT
CHENG TS
TANSLEY TL
ORTON JW
LACKLISON DE
JOHNSTON D
BABAALI N
HOOPER SE
JENKINS LC
EAVES L
Citation: Sv. Novikov et al., AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 340-343
Authors:
LACKLISON DE
ORTON JW
HARRISON I
CHENG TS
JENKINS LC
FOXON CT
HOOPER SE
Citation: De. Lacklison et al., BAND-GAP OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS AND GAPSUBSTRATES, Journal of applied physics, 78(3), 1995, pp. 1838-1842
Authors:
CHENG TS
JENKINS LC
HOOPER SE
FOXON CT
ORTON JW
LACKLISON DE
Citation: Ts. Cheng et al., SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUMNITRIDE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(12), 1995, pp. 1509-1511
Authors:
ALLEN TJ
CURTIS KM
ORTON JW
Citation: Tj. Allen et al., WEIGHT AND NEURON OUTPUT RESOLUTION REQUIREMENTS IN OPTOELECTRONIC NEURAL NETWORKS, Applied optics, 34(20), 1995, pp. 4136-4139
Authors:
FOXON CT
CHENG TS
DAWSON P
LACKLISON DE
ORTON JW
VANDERVLEUTEN W
HUGHES OH
HENINI M
Citation: Ct. Foxon et al., EXTERNAL PHOTOLUMINESCENCE EFFICIENCY AND MINORITY-CARRIER LIFETIME OF (AL,GA)AS GAAS MULTI-QUANTUM-WELL SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY USING BOTH AS2 AND AS4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1026-1028
Authors:
ORTON JW
DAWSON P
LACKLISON DE
CHENG TS
FOXON CT
Citation: Jw. Orton et al., RECOMBINATION LIFETIME MEASUREMENTS IN ALGAAS GAAS QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 9(9), 1994, pp. 1616-1622
Authors:
YORK RJ
SMITH SRP
DUMELOW T
FOXON CT
HILTON D
ORTON JW
Citation: Rj. York et al., RAMAN-SPECTROSCOPY OF GAAS-ALAS SUPERLATTICES - A STUDY OF INTERFACE ROUGHNESS, Journal of luminescence, 60-1, 1994, pp. 349-352
Authors:
MATIN MA
JEZIERSKI AF
BASHAR SA
LACKLISON DE
BENSON TM
CHENG TS
ROBERTS JS
SALE TE
ORTON JW
FOXON CT
REZAZADEH AA
Citation: Ma. Matin et al., OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS (VOL 30, PG 318, 1994), Electronics Letters, 30(6), 1994, pp. 532-532
Authors:
MATIN MA
JEZIERSKI AF
BASHAR SA
LACKLISON DE
BENSON TM
CHENG TS
ROBERTS JS
SALE TE
ORTON JW
FOXON CT
REZAZADEH AA
Citation: Ma. Matin et al., OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 30(4), 1994, pp. 318-320
Authors:
CHENG TS
DAWSON P
LACKLISON DE
FOXON CT
ORTON JW
HUGHES OH
HENINI M
Citation: Ts. Cheng et al., SUBSTRATE-TEMPERATURE DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN (ALGA)AS GAAS MQWS GROWN WITH AS-2 AND AS-4/, Journal of crystal growth, 127(1-4), 1993, pp. 841-844
Authors:
ALLEN TJ
CURTIS KM
ORTON JW
Citation: Tj. Allen et al., INVESTIGATION INTO EFFECTS OF DEVICE VARIATION ON PERFORMANCE OF OPTOELECTRONIC NEURAL NETWORKS, Electronics Letters, 29(24), 1993, pp. 2131-2132