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Results:
1-18
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Results: 18
Authors:
KAZANTSEV DV
GIPPIUS NA
OSHINOWO J
FORCHEL A
Citation: Dv. Kazantsev et al., DIRECT MEASUREMENT OF PHOTOLUMINESCENCE SPATIAL-DISTRIBUTION NEAR THEGAAS ALGAAS QUANTUM-WELL EDGE USING A SCANNING NEAR-FIELD OPTICAL MICROSCOPE/, Ultramicroscopy, 71(1-4), 1998, pp. 235-241
Authors:
PASCHKE K
GEUE T
BARBERKA TA
BOLM A
PIETSCH U
ROSCH M
BATKE E
FALLER F
KERKEL K
OSHINOWO J
FORCHEL A
Citation: K. Paschke et al., CHARACTERIZATION OF LATERAL SEMICONDUCTOR NANOSTRUCTURES BY MEANS OF X-RAY GRAZING-INCIDENCE DIFFRACTION, Applied physics letters, 70(8), 1997, pp. 1031-1033
Authors:
FORCHEL A
ILS P
WANG KH
SCHILLING O
STEFFEN R
OSHINOWO J
Citation: A. Forchel et al., QUANTUM WIRES AND DOTS FOR OPTICAL STUDIES, Microelectronic engineering, 32(1-4), 1996, pp. 317-330
Authors:
STEFFEN R
FORCHEL A
REINECKE TL
KOCH T
ALBRECHT M
OSHINOWO J
FALLER F
Citation: R. Steffen et al., SINGLE QUANTUM DOTS AS LOCAL PROBES OF ELECTRONIC-PROPERTIES OF SEMICONDUCTORS, Physical review. B, Condensed matter, 54(3), 1996, pp. 1510-1513
Authors:
OHNESORGE B
ALBRECHT M
OSHINOWO J
FORCHEL A
ARAKAWA Y
Citation: B. Ohnesorge et al., RAPID CARRIER RELAXATION IN SELF-ASSEMBLED INXGA1-XAS GAAS QUANTUM DOTS/, Physical review. B, Condensed matter, 54(16), 1996, pp. 11532-11538
EXCITON INTERACTION EFFECTS IN THE EMISSION-SPECTRA OF SINGLE FREESTANDING INGAAS GAAS QUANTUM DOTS/
Authors:
STEFFEN R
KOCH T
OSHINOWO J
FALLER F
FORCHEL A
Citation: R. Steffen et al., EXCITON INTERACTION EFFECTS IN THE EMISSION-SPECTRA OF SINGLE FREESTANDING INGAAS GAAS QUANTUM DOTS/, Surface science, 362(1-3), 1996, pp. 805-809
Authors:
STEFFEN R
KOCH T
OSHINOWO J
FALLER F
FORCHEL A
Citation: R. Steffen et al., PHOTOLUMINESCENCE STUDY OF DEEP ETCHED INGAAS GAAS QUANTUM WIRES AND DOTS DEFINED BY LOW-VOLTAGE ELECTRON-BEAM LITHOGRAPHY/, Applied physics letters, 68(2), 1996, pp. 223-225
Authors:
KITAMURA M
NISHIOKA M
OSHINOWO J
ARAKAWA Y
Citation: M. Kitamura et al., FORMATION OF INGAAS QUANTUM DOTS ON GAAS MULTI-ATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH, JPN J A P 1, 34(8B), 1995, pp. 4376-4379
Authors:
STEFFEN R
OSHINOWO J
KOCH T
FORCHEL A
Citation: R. Steffen et al., INGAAS GAAS QUANTUM WIRES AND DOTS DEFINED BY LOW-VOLTAGE ELECTRON-BEAM LITHOGRAPHY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2888-2891
Authors:
BAYER M
TIMOFEEV VB
GUTBROD T
FORCHEL A
STEFFEN R
OSHINOWO J
Citation: M. Bayer et al., ENHANCEMENT OF SPIN SPLITTING DUE TO SPATIAL CONFINEMENT IN INXGA1-XAS QUANTUM DOTS, Physical review. B, Condensed matter, 52(16), 1995, pp. 11623-11625
Authors:
KERKEL K
OSHINOWO J
FORCHEL A
WEBER J
ZIELINSKI E
Citation: K. Kerkel et al., LATERAL QUANTIZATION EFFECTS IN MODULATED BARRIER INGAAS INP QUANTUM WIRES/, Applied physics letters, 67(23), 1995, pp. 3456-3458
Authors:
KITAMURA M
NISHIOKA M
OSHINOWO J
ARAKAWA Y
Citation: M. Kitamura et al., IN-SITU FABRICATION OF SELF-ALIGNED INGAAS QUANTUM DOTS ON GAAS MULTIATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(26), 1995, pp. 3663-3665
AREA DENSITY CONTROL OF QUANTUM-SIZE INGAAS GA(A1)AS DOTS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors:
OSHINOWO J
NISHIOKA M
ISHIDA S
ARAKAWA Y
Citation: J. Oshinowo et al., AREA DENSITY CONTROL OF QUANTUM-SIZE INGAAS GA(A1)AS DOTS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 2, 33(11B), 1994, pp. 120001634-120001637
Authors:
KERKEL K
OSHINOWO J
FORCHEL A
WEBER J
LAUBE G
GYURO I
ZIELINSKI E
Citation: K. Kerkel et al., HIGH-RESOLUTION DEFINITION OF BURIED INGAAS INP WIRES BY SELECTIVE THERMAL/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3685-3688
Authors:
OSHINOWO J
NISHIOKA M
ISHIDA S
ARAKAWA Y
Citation: J. Oshinowo et al., HIGHLY UNIFORM INGAAS QUANTUM DOTS (APPROXIMATE-TO-15-NM) GROWN BY MOVPE ON GAAS, Journal of crystal growth, 145(1-4), 1994, pp. 986-987
Authors:
OSHINOWO J
NISHIOKA M
ISHIDA S
ARAKAWA Y
Citation: J. Oshinowo et al., HIGHLY UNIFORM INGAAS GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 65(11), 1994, pp. 1421-1423
Authors:
OSHINOWO J
FORCHEL A
GANIERE JD
RUTERANA P
STADELMANN PA
GYURO I
LAUBE G
ZIELINSKI E
Citation: J. Oshinowo et al., INVESTIGATION OF INGAAS INP INTERDIFFUSION BY SIMULTANEOUS TRANSMISSION ELECTRON-MICROSCOPY AND PHOTOLUMINESCENCE ANALYSIS/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 277-280
Authors:
OSHINOWO J
DREYBRODT J
FORCHEL A
MESTRES N
CALLEJA JM
GYURO I
SPEIER P
ZIELINSKI E
Citation: J. Oshinowo et al., PHOTOLUMINESCENCE STUDY OF IMPLANTATION-INDUCED INTERMIXING OF IN0.53GA0.47AS INP SINGLE QUANTUM-WELLS BY ARGON IONS/, Journal of applied physics, 74(3), 1993, pp. 1983-1986
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