Authors: OTTOW S POPKIROV GS FOLL H

Citation: S. Ottow et al., DETERMINATION OF FLAT-BAND POTENTIALS OF SILICON ELECTRODES IN HF BY MEANS OF AC RESISTANCE MEASUREMENTS, Journal of electroanalytical chemistry [1992], 455(1-2), 1998, pp. 29-37

Authors: BIRNER A GRUNING U OTTOW S SCHNEIDER A MULLER F LEHMANN V FOLL H GOSELE U

Citation: A. Birner et al., MACROPOROUS SILICON - A 2-DIMENSIONAL PHOTONIC BANDGAP MATERIAL SUITABLE FOR THE NEAR-INFRARED SPECTRAL RANGE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 111-117

Authors: POPKIROV GS OTTOW S

Citation: Gs. Popkirov et S. Ottow, IN-SITU IMPEDANCE SPECTROSCOPY OF SILICON ELECTRODES DURING THE FIRSTSTAGES OF POROUS SILICON FORMATION, Journal of electroanalytical chemistry [1992], 429(1-2), 1997, pp. 47-54

Authors: OTTOW S LEHMANN V FOLL H

Citation: S. Ottow et al., DEVELOPMENT OF 3-DIMENSIONAL MICROSTRUCTURE PROCESSING USING MACROPOROUS N-TYPE SILICON, Applied physics A: Materials science & processing, 63(2), 1996, pp. 153-159

Authors: OTTOW S LEHMANN V FOLL H

Citation: S. Ottow et al., PROCESSING OF 3-DIMENSIONAL MICROSTRUCTURES USING MACROPOROUS N-TYPE SILICON, Journal of the Electrochemical Society, 143(1), 1996, pp. 385-390

Authors: GRUNING U LEHMANN V OTTOW S BUSCH K

Citation: U. Gruning et al., MACROPOROUS SILICON WITH A COMPLETE 2-DIMENSIONAL PHOTONIC BAND-GAP CENTERED AT 5 MU-M, Applied physics letters, 68(6), 1996, pp. 747-749