Authors: OUENNOUGHI Z

Citation: Z. Ouennoughi, ON THE MINIMUM IN THE FORWARD CAPACITANCE IN MIS TUNNEL-DIODES, Physica status solidi. a, Applied research, 160(1), 1997, pp. 127-132

Authors: OUENNOUGHI Z SELLAI A

Citation: Z. Ouennoughi et A. Sellai, MIS TUNNEL ADMITTANCE WITH AN INHOMOGENEOUS DIELECTRIC, International journal of electronics, 83(5), 1997, pp. 571-580

Authors: BOULKROUN K OUENNOUGHI Z BOUZIANE A BOUGDIRA J ELBOUABDELLATI M LEPLEY B

Citation: K. Boulkroun et al., DETERMINATION OF INTERFACE STATE DENSITY ON AU TA2O5/N-INP STRUCTURESBY DIFFERENT METHODS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 416-420

Authors: OUENNOUGHI Z BOULKROUN K REMY M HUGON R CUSSENOT JR

Citation: Z. Ouennoughi et al., ANALYSIS OF INP SCHOTTKY TUNNEL METAL-INSULATOR-SEMICONDUCTOR DIODE CHARACTERISTICS WITH A CONDUCTANCE TECHNIQUE, Journal of physics. D, Applied physics, 27(5), 1994, pp. 1014-1019

Authors: BOUZIANE A REMY M OUENNOUGHI Z SIMON C ALNOT M

Citation: A. Bouziane et al., INFLUENCE OF PLASMA TREATMENT CONDITIONS ON GROWTH AND ELECTRICAL-PROPERTIES OF OXIDES ON INP, Surface & coatings technology, 59(1-3), 1993, pp. 121-125