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Results: 1-12 |
Results: 12
FOCAL PHOTODETECTOR ARRAYS BASED ON CDHGTE HETEROEPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
Authors: VASILEV VV VOINOV VG ESAEV DG ZAKHARYASH TI KLIMENKO AG KOZLOV AI KRYMSKII AI MARCHISHIN IV OVSYUK VN ROMASHKO LF SVITASHEV KK SUSLYAKOV AO TALIPOV NK SIDOROV YG VARAVIN VC DVORETSKII SA MIKHAILOV NN
Citation: Vv. Vasilev et al., FOCAL PHOTODETECTOR ARRAYS BASED ON CDHGTE HETEROEPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES, Journal of optical technology, 65(1), 1998, pp. 68-72
PHOTOELECTRICAL MEMORY IN GAAS ALGAAS MULTILAYER QUANTUM-WELL STRUCTURES/
Authors: OVSYUK VN DEMYANENKO MA SHASHKIN VV TOROPOV AI
Citation: Vn. Ovsyuk et al., PHOTOELECTRICAL MEMORY IN GAAS ALGAAS MULTILAYER QUANTUM-WELL STRUCTURES/, Semiconductors, 32(2), 1998, pp. 189-194
THE NATURE OF THE DEEP LEVELS RESPONSIBLE FOR PHOTOELECTRIC MEMORY INGAAS ALGAAS MULTILAYER QUANTUM-WELL STRUCTURES/
Authors: OVSYUK VN DEMYANENKO MA SHASHKIN VV TOROPOV AI
Citation: Vn. Ovsyuk et al., THE NATURE OF THE DEEP LEVELS RESPONSIBLE FOR PHOTOELECTRIC MEMORY INGAAS ALGAAS MULTILAYER QUANTUM-WELL STRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1082-1086
MODIFICATION OF HGCDTE-NATIVE OXIDE INTERFACE BY ANNEALING
Authors: ROMASHKO LN OVSYUK VN VASILEV VV NESTEROV AA
Citation: Ln. Romashko et al., MODIFICATION OF HGCDTE-NATIVE OXIDE INTERFACE BY ANNEALING, Physica status solidi. a, Applied research, 168(2), 1998, pp. 433-439
USE OF A LOW-TEMPERATURE EMITTER IN INVESTIGATING THE SPECTRAL CHARACTERISTICS OF INFRARED PHOTODETECTORS
Authors: VASILEV VV MASHUKOV YP OVSYUK VN
Citation: Vv. Vasilev et al., USE OF A LOW-TEMPERATURE EMITTER IN INVESTIGATING THE SPECTRAL CHARACTERISTICS OF INFRARED PHOTODETECTORS, Semiconductors, 31(6), 1997, pp. 642-644
ELECTRICAL ACTIVATION OF BORON-IMPLANTED IN P-HGCDTE (X=0.22) BY LOW-TEMPERATURE ANNEALING UNDER AN ANODIC OXIDE
Authors: TALIPOV NK OVSYUK VN REMESNIK VG VASILYEV VV
Citation: Nk. Talipov et al., ELECTRICAL ACTIVATION OF BORON-IMPLANTED IN P-HGCDTE (X=0.22) BY LOW-TEMPERATURE ANNEALING UNDER AN ANODIC OXIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 266-269
METHOD FOR THE CHARACTERIZATION OF ELECTRON, LIGHT-HOLE AND HEAVY-HOLE CONCENTRATIONS AND MOBILITIES IN NARROW-GAP P-TYPE HGCDTE
Authors: TALIPOV NK OVSYUK VN REMESNIK VG SCHASCHKIN VV
Citation: Nk. Talipov et al., METHOD FOR THE CHARACTERIZATION OF ELECTRON, LIGHT-HOLE AND HEAVY-HOLE CONCENTRATIONS AND MOBILITIES IN NARROW-GAP P-TYPE HGCDTE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 278-282
CAPACITANCE-VOLTAGE PROFILING OF MULTIQUANTUM-WELL STRUCTURES
Authors: BOBYLEV BA KOVALEVSKAJA TE MARCHISHIN IV OVSYUK VN
Citation: Ba. Bobylev et al., CAPACITANCE-VOLTAGE PROFILING OF MULTIQUANTUM-WELL STRUCTURES, Solid-state electronics, 41(3), 1997, pp. 481-486
PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK VASILEV VV ZAHARYASH TI SIDOROV YG DVORETSKY SA MIKHAYLOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN VASILEV VV ZAKHARYASH TI REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK SIDOROV YG DVORETSKII SA MIKHAILOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY, Semiconductors, 30(2), 1996, pp. 109-111
ON THE POTENTIAL DISTRIBUTION IN A THIN SEMICONDUCTOR LAYER
Authors: KOVALEVSKAYA TE OVSYUK VN
Citation: Te. Kovalevskaya et Vn. Ovsyuk, ON THE POTENTIAL DISTRIBUTION IN A THIN SEMICONDUCTOR LAYER, Semiconductors, 30(10), 1996, pp. 910-912
INFRARED PHOTODETECTOR ELEMENTS BASED ON GAAS ALGAAS MULTILAYER QUANTUM-WELLS/
Authors: BAKLANOV MR DEMYANENKO MA MOSHEGOV NT KOPP OR OVSYUK VN SVITASHEV KK TOROPOV AI SHASHKIN VV
Citation: Mr. Baklanov et al., INFRARED PHOTODETECTOR ELEMENTS BASED ON GAAS ALGAAS MULTILAYER QUANTUM-WELLS/, Soviet journal of optical technology, 59(12), 1992, pp. 789-792
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