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Results:
1-7
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Results: 7
Authors:
Ochalski, TJ
Gil, B
Bigenwald, P
Bugajski, M
Wojcik, A
Lefebvre, P
Taliercio, T
Grandjean, N
Massies, J
Citation: Tj. Ochalski et al., Dual contribution to the Stokes shift in InGaN-GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 111-114
Authors:
Bugajski, M
Muszalski, J
Mroziewicz, B
Reginski, K
Ochalski, TJ
Citation: M. Bugajski et al., Resonant cavity enhanced photonic devices, OPT APPL, 31(2), 2001, pp. 273-288
Authors:
Teisseyre, H
Ochalski, TJ
Perlin, P
Suski, T
Leszczynski, M
Grzegory, I
Bockowski, M
Lucznik, B
Bugajski, M
Palczewska, M
Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Authors:
Ochalski, TJ
Gil, B
Bretagnon, T
Lefebvre, P
Grandjean, N
Massies, J
Leroux, M
Citation: Tj. Ochalski et al., Photoreflectance spectroscopy investigation of GaN-AlGaN quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 221-225
Authors:
Ochalski, TJ
Gil, B
Lefebvre, P
Grandjean, N
Massies, J
Leroux, M
Citation: Tj. Ochalski et al., Photoreflectance spectroscopy as a powerful tool for the investigation of GaN-AlGaN quantum well structures, SOL ST COMM, 109(9), 1999, pp. 567-571
Authors:
Ochalski, TJ
Gil, B
Lefebvre, P
Grandjean, N
Leroux, M
Massies, J
Nakamura, S
Morkoc, H
Citation: Tj. Ochalski et al., Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN, APPL PHYS L, 74(22), 1999, pp. 3353-3355
Authors:
Zuk, J
Ochalski, TJ
Kulik, M
Liskiewicz, J
Kobzev, AP
Citation: J. Zuk et al., Effect of oxygen implantation on ionoluminescence of porous silicon, J LUMINESC, 80(1-4), 1998, pp. 187-192
Risultati:
1-7
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