AAAAAA
Results:
1-18
|
Results: 18
Authors:
Onabe, K
Akata, H
Higashiyama, K
Nagaya, S
Saitoh, T
Citation: K. Onabe et al., Superconducting property of Y1Ba2Cu3Ox films formed on silver substrates by continuous chemical vapor deposition technique, IEEE APPL S, 11(1), 2001, pp. 3150-3153
Authors:
Onabe, K
Higashiyama, K
Kashima, N
Nagaya, S
Takeda, K
Citation: K. Onabe et al., Superconducting property of Re123 films formed on textured silver tapes bychemical vapor deposition, PHYSICA C, 357, 2001, pp. 931-933
Authors:
Yaguchi, H
Matsumoto, S
Hijikata, Y
Yoshida, S
Maeda, T
Ogura, M
Aoki, D
Onabe, K
Citation: H. Yaguchi et al., Spectroscopic ellipsometry study on the electronic structure near the absorption edge of GaAsN alloys, PHYS ST S-B, 228(1), 2001, pp. 269-272
Authors:
Yaguchi, H
Kikuchi, S
Hijikata, Y
Yoshida, S
Aoki, D
Onabe, K
Citation: H. Yaguchi et al., Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys, PHYS ST S-B, 228(1), 2001, pp. 273-277
Authors:
Sato, M
Yaguchi, H
Shoji, I
Onabe, K
Ito, R
Shiraki, Y
Nakagawa, S
Yamada, N
Citation: M. Sato et al., Second-harmonic generation from GaP/AlP multilayers on GaP (111) substrates based on quasi-phase matching for the fundamental standing wave, JPN J A P 2, 39(4B), 2000, pp. L334-L336
Authors:
Onabe, K
Wu, J
Katayama, R
Zhao, FH
Nagayama, A
Shiraki, Y
Citation: K. Onabe et al., Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy, PHYS ST S-A, 180(1), 2000, pp. 15-19
Optical properties of cubic GaN grown on 3C-SiC (100) substrates by metalorganic vapor phase epitaxy
Authors:
Wu, J
Yaguchi, H
Zhang, BP
Segawa, Y
Onabe, K
Shiraki, Y
Citation: J. Wu et al., Optical properties of cubic GaN grown on 3C-SiC (100) substrates by metalorganic vapor phase epitaxy, PHYS ST S-A, 180(1), 2000, pp. 403-407
Authors:
Wu, J
Zhao, FH
Onabe, K
Shiraki, Y
Citation: J. Wu et al., Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (100) substrates by inserting an intermediate protection layer, J CRYST GR, 221, 2000, pp. 276-279
Authors:
Matsumoto, S
Yaguchi, H
Kashiwase, S
Hashimoto, T
Yoshida, S
Aoki, D
Onabe, K
Citation: S. Matsumoto et al., Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1-xNx alloys using spectroscopic ellipsometry, J CRYST GR, 221, 2000, pp. 481-484
Authors:
Onabe, K
Kawai, H
Citation: K. Onabe et H. Kawai, Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Epitaxy Sapporo, Japan, 5-9 June 2000 - Preface, J CRYST GR, 221, 2000, pp. XI-XI
Authors:
Tsujikawa, T
Irisawa, T
Yaguchi, H
Onabe, K
Shiraki, Y
Ito, R
Citation: T. Tsujikawa et al., High-temperature metalorganic vapor phase epitaxial growth of GaAs/AlGaAs quantum structures in tetrahedral-shaped recesses on GaAs (111)B substrates, JPN J A P 1, 38(1B), 1999, pp. 459-464
Authors:
Yaguchi, H
Wu, J
Akiyama, H
Baba, M
Onabe, K
Shiraki, Y
Citation: H. Yaguchi et al., Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy, PHYS ST S-B, 216(1), 1999, pp. 237-240
Authors:
Onabe, K
Aoki, D
Wu, J
Yaguchi, H
Shiraki, Y
Citation: K. Onabe et al., MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations, PHYS ST S-A, 176(1), 1999, pp. 231-235
Authors:
Nagayama, A
Katayama, R
Nakadan, N
Miwa, K
Yaguchi, H
Wu, J
Onabe, K
Shiraki, Y
Citation: A. Nagayama et al., Substrate misorientation dependence of the hexagonal phase inclusion in cubic GaN films grown by metalorganic vapor phase epitaxy, PHYS ST S-A, 176(1), 1999, pp. 513-517
Authors:
Wu, J
Kudo, M
Nagayama, A
Yaguchi, H
Onabe, K
Shiraki, Y
Citation: J. Wu et al., Selective growth of cubic GaN an patterned GaAs(100) substrates by metalorganic vapor phase epitaxy, PHYS ST S-A, 176(1), 1999, pp. 557-560
Authors:
Wu, J
Yaguchi, H
Onabe, K
Shiraki, Y
Citation: J. Wu et al., Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures, J CRYST GR, 197(1-2), 1999, pp. 73-77
Authors:
Yaguchi, H
Wu, J
Zhang, BP
Segawa, Y
Nagasawa, H
Onabe, K
Shiraki, Y
Citation: H. Yaguchi et al., Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001) substrates by metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 323-327
Authors:
Biwa, G
Yaguchi, H
Onabe, K
Shiraki, Y
Citation: G. Biwa et al., Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures, J CRYST GR, 195(1-4), 1998, pp. 574-578
Risultati:
1-18
|