Authors:
Chazalviel, JN
Erne, BH
Maroun, F
Ozanam, F
Citation: Jn. Chazalviel et al., In situ infrared spectroscopy of the semiconductor vertical bar electrolyte interface, J ELEC CHEM, 509(2), 2001, pp. 108-118
Authors:
Chazalviel, JN
Erne, BH
Maroun, F
Ozanam, F
Citation: Jn. Chazalviel et al., New directions and challenges in modern electrochemistry: in situ infraredspectroscopy of the semiconductor vertical bar electrolyte interface, J ELEC CHEM, 502(1-2), 2001, pp. 180-190
Authors:
Sigaud, P
Chazalviel, JN
Ozanam, F
Stephan, O
Citation: P. Sigaud et al., Determination of energy barriers in organic light-emitting diodes by internal photoemission, J APPL PHYS, 89(1), 2001, pp. 466-470
Authors:
Erne, BH
Ozanam, F
Stchakovsky, M
Vanmaekelbergh, D
Chazalviel, JN
Citation: Bh. Erne et al., GaAs/H2O2 electrochemical interface studied in situ by infrared spectroscopy and ultraviolet-visible ellipsometry part I: Identification of chemical species, J PHYS CH B, 104(25), 2000, pp. 5961-5973
Authors:
Erne, BH
Ozanam, F
Stchakovsky, M
Vanmaekelbergh, D
Chazalviel, JN
Citation: Bh. Erne et al., GaAs/H2O2 electrochemical interface studied in situ by infrared spectroscopy and ultraviolet-visible ellipsometry part II: Chemical origin of cathodic oscillations, J PHYS CH B, 104(25), 2000, pp. 5974-5985
Citation: Jn. Chazalviel et al., Electrochemical preparation of porous semiconductors: from phenomenology to understanding, MAT SCI E B, 69, 2000, pp. 1-10
Authors:
Fellah, S
Ozanam, F
Gabouze, N
Chazalviel, JN
Citation: S. Fellah et al., Porous silicon in solvents: Constant-lifetime PL quenching and confirmation of dielectric effects, PHYS ST S-A, 182(1), 2000, pp. 367-372
Authors:
Chazalviel, JN
Belaidi, A
Safi, M
Maroun, F
Erne, BH
Ozanam, F
Citation: Jn. Chazalviel et al., In situ semiconductor surface characterisation: a comparative infrared study of Si, Ge and GaAs, ELECTR ACT, 45(20), 2000, pp. 3205-3211
Citation: F. Maroun et al., In-situ infrared monitoring of surface chemistry and free-carrier concentration correlated with voltammetry: Germanium, a model electrode, J PHYS CH B, 103(25), 1999, pp. 5280-5288
Citation: Bh. Erne et al., The mechanism of hydrogen gas evolution on GaAs cathodes elucidated by in situ infrared spectroscopy, J PHYS CH B, 103(15), 1999, pp. 2948-2962
Authors:
Erne, BH
Maroun, F
Ozanam, F
Chazalviel, JN
Citation: Bh. Erne et al., Local pH change during diffusion-limited proton reduction determined by insitu infrared spectroscopy, EL SOLID ST, 2(5), 1999, pp. 231-232
Authors:
Belaidi, A
Safi, M
Ozanam, F
Chazalviel, JN
Gorochov, O
Citation: A. Belaidi et al., Surface chemistry during porous-silicon formation in dilute fluoride electrolytes, J ELCHEM SO, 146(7), 1999, pp. 2659-2664
Authors:
Fellah, S
Wehrspohn, RB
Gabouze, N
Ozanam, F
Chazalviel, JN
Citation: S. Fellah et al., Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects, J LUMINESC, 80(1-4), 1998, pp. 109-113