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Results: 1-23 |
Results: 23

Authors: Chazalviel, JN Erne, BH Maroun, F Ozanam, F
Citation: Jn. Chazalviel et al., In situ infrared spectroscopy of the semiconductor vertical bar electrolyte interface, J ELEC CHEM, 509(2), 2001, pp. 108-118

Authors: Chazalviel, JN Erne, BH Maroun, F Ozanam, F
Citation: Jn. Chazalviel et al., New directions and challenges in modern electrochemistry: in situ infraredspectroscopy of the semiconductor vertical bar electrolyte interface, J ELEC CHEM, 502(1-2), 2001, pp. 180-190

Authors: Maroun, F Ozanam, F Magnussen, OM Behm, RJ
Citation: F. Maroun et al., The role of atomic ensembles in the reactivity of bimetallic electrocatalysts, SCIENCE, 293(5536), 2001, pp. 1811-1814

Authors: Sigaud, P Chazalviel, JN Ozanam, F Stephan, O
Citation: P. Sigaud et al., Determination of energy barriers in organic light-emitting diodes by internal photoemission, J APPL PHYS, 89(1), 2001, pp. 466-470

Authors: Erne, BH Ozanam, F Chazalviel, JN
Citation: Bh. Erne et al., Semiconductor flatband potential determination by electromodulated infrared spectroscopy, J PHYS CH B, 104(49), 2000, pp. 11591-11593

Authors: Erne, BH Ozanam, F Stchakovsky, M Vanmaekelbergh, D Chazalviel, JN
Citation: Bh. Erne et al., GaAs/H2O2 electrochemical interface studied in situ by infrared spectroscopy and ultraviolet-visible ellipsometry part I: Identification of chemical species, J PHYS CH B, 104(25), 2000, pp. 5961-5973

Authors: Erne, BH Ozanam, F Stchakovsky, M Vanmaekelbergh, D Chazalviel, JN
Citation: Bh. Erne et al., GaAs/H2O2 electrochemical interface studied in situ by infrared spectroscopy and ultraviolet-visible ellipsometry part II: Chemical origin of cathodic oscillations, J PHYS CH B, 104(25), 2000, pp. 5974-5985

Authors: Chazalviel, JN Wehrspohn, RB Ozanam, F
Citation: Jn. Chazalviel et al., Electrochemical preparation of porous semiconductors: from phenomenology to understanding, MAT SCI E B, 69, 2000, pp. 1-10

Authors: Gros-Jean, M Herino, R Chazalviel, JN Ozanam, F Lincot, D
Citation: M. Gros-jean et al., Formation and characterization of CdS/methyl-grafted porous silicon junctions, MAT SCI E B, 69, 2000, pp. 77-80

Authors: Fidelis, A Ozanam, F Chazalviel, JN
Citation: A. Fidelis et al., Fully methylated, atomically flat (111) silicon surface, SURF SCI, 444(1-3), 2000, pp. L7-L10

Authors: Fellah, S Gabouze, N Ozanam, F Chazalviel, JN Beldjilali, K
Citation: S. Fellah et al., Pit formation on p-Si during hydrogen evolution in HF electrolyte, PHYS ST S-A, 182(1), 2000, pp. 31-36

Authors: Fellah, S Ozanam, F Gabouze, N Chazalviel, JN
Citation: S. Fellah et al., Porous silicon in solvents: Constant-lifetime PL quenching and confirmation of dielectric effects, PHYS ST S-A, 182(1), 2000, pp. 367-372

Authors: Chazalviel, JN Belaidi, A Safi, M Maroun, F Erne, BH Ozanam, F
Citation: Jn. Chazalviel et al., In situ semiconductor surface characterisation: a comparative infrared study of Si, Ge and GaAs, ELECTR ACT, 45(20), 2000, pp. 3205-3211

Authors: Maroun, F Ozanam, F Chazalviel, JN
Citation: F. Maroun et al., In-situ infrared monitoring of surface chemistry and free-carrier concentration correlated with voltammetry: Germanium, a model electrode, J PHYS CH B, 103(25), 1999, pp. 5280-5288

Authors: Erne, BH Ozanam, F Chazalviel, JN
Citation: Bh. Erne et al., The mechanism of hydrogen gas evolution on GaAs cathodes elucidated by in situ infrared spectroscopy, J PHYS CH B, 103(15), 1999, pp. 2948-2962

Authors: Wehrspohn, RB Chazalviel, JN Ozanam, F Solomon, I
Citation: Rb. Wehrspohn et al., Spatial versus quantum confinement in porous amorphous silicon nanostructures, EUR PHY J B, 8(2), 1999, pp. 179-193

Authors: Erne, BH Maroun, F Ozanam, F Chazalviel, JN
Citation: Bh. Erne et al., Local pH change during diffusion-limited proton reduction determined by insitu infrared spectroscopy, EL SOLID ST, 2(5), 1999, pp. 231-232

Authors: Maroun, F Ozanam, F Chazalviel, JN Theiss, W
Citation: F. Maroun et al., In situ infrared investigation of metals electrodeposited for SEIRAS, VIB SPECTR, 19(2), 1999, pp. 193-198

Authors: Maroun, F Ozanam, F Chazalviel, JN
Citation: F. Maroun et al., In situ infrared monitoring of hydrogen adsorption desorption at a germanium electrode, SURF SCI, 428, 1999, pp. 184-189

Authors: Wehrspohn, RB Ozanam, F Chazalviel, JN
Citation: Rb. Wehrspohn et al., Nano- and macropore formation in p-type silicon, J ELCHEM SO, 146(9), 1999, pp. 3309-3314

Authors: Belaidi, A Safi, M Ozanam, F Chazalviel, JN Gorochov, O
Citation: A. Belaidi et al., Surface chemistry during porous-silicon formation in dilute fluoride electrolytes, J ELCHEM SO, 146(7), 1999, pp. 2659-2664

Authors: Fellah, S Wehrspohn, RB Gabouze, N Ozanam, F Chazalviel, JN
Citation: S. Fellah et al., Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects, J LUMINESC, 80(1-4), 1998, pp. 109-113

Authors: Ozanam, F Vieillard, C Warntjes, M Dubois, T Pauly, M Chazalviel, JN
Citation: F. Ozanam et al., Electrochemical grafting of molecules to a silicon surface, CAN J CH EN, 76(6), 1998, pp. 1020-1026
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