Authors: JOHNSTON PN RUSSO SP ELLIMAN RG PAIN GN

Citation: Pn. Johnston et al., STUDY OF MOCVD GROWN HG1-XCDXTE BY ION-BEAM TECHNIQUES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 490-492

Authors: DICKSON RS HEAZLE KD PAIN GN DEACON GB WEST BO FALLON GD ROWE RS LEECH PW FAITH M

Citation: Rs. Dickson et al., ANTIMONY SOURCES FOR MOCVD - THE USE OF ET4SB2 AS A P-TYPE DOPANT FORHG1-XCDXTE AND CRYSTAL-STRUCTURE OF THE ADDUCT [ET4SB2.2CDI2]N, Journal of organometallic chemistry, 449(1-2), 1993, pp. 131-139

Authors: RUSSO SP PAIN GN JOHNSTON PN ELLIMAN RG

Citation: Sp. Russo et al., DETERMINATION OF COMPOSITION, THICKNESS AND GROWTH-RATE PROFILES OF MOCVD GROWN HG1-XCDXTE, Journal of crystal growth, 131(1-2), 1993, pp. 124-132

Authors: GAO D WILKINS SW STEVENSON AW PAIN GN

Citation: D. Gao et al., NEAR-SURFACE REGION CHARACTERIZATION BY EXTREMELY ASYMMETRIC BRAGG REFLECTION TOPOGRAPHY, Journal of applied physics, 74(5), 1993, pp. 3126-3130

Authors: PAIN GN

Citation: Gn. Pain, METHOD FOR PRODUCTION OF UNIFORM THIN-FILMS FROM THE VAPOR-PHASE, Australian journal of physics, 46(1), 1993, pp. 121-126