AAAAAA

   
Results: 1-25 |
Results: 25
FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-CARBIDE THYRISTORSAND DIODES AT HIGH-CURRENT DENSITIES
Authors: LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL SINGH R
Citation: Me. Levinshtein et al., FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-CARBIDE THYRISTORSAND DIODES AT HIGH-CURRENT DENSITIES, Semiconductor science and technology, 13(9), 1998, pp. 1006-1010
TURN-ON PROCESS IN HIGH-VOLTAGE 4H-SIC THYRISTORS
Authors: DYAKONOVA NV LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL SINGH R
Citation: Nv. Dyakonova et al., TURN-ON PROCESS IN HIGH-VOLTAGE 4H-SIC THYRISTORS, Semiconductor science and technology, 13(2), 1998, pp. 241-243
DC I-V CHARACTERISTICS AND RF PERFORMANCE OF A 4H-SIC JFET AT 773 K
Authors: HATFIELD CW BILBRO GL ALLEN ST PALMOUR JW
Citation: Cw. Hatfield et al., DC I-V CHARACTERISTICS AND RF PERFORMANCE OF A 4H-SIC JFET AT 773 K, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2072-2074
THE CRITICAL CHARGE-DENSITY OF 4H-SIC THYRISTORS
Authors: LEVINSHTEIN ME PALMOUR JW RUMYANETSEV SL SINGH R
Citation: Me. Levinshtein et al., THE CRITICAL CHARGE-DENSITY OF 4H-SIC THYRISTORS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 307-312
SIC DEVICE TECHNOLOGY - REMAINING ISSUES
Authors: PALMOUR JW LIPKIN LA SINGH R SLATER DB SUVOROV AV CARTER CH
Citation: Jw. Palmour et al., SIC DEVICE TECHNOLOGY - REMAINING ISSUES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1400-1404
4H-SIC MESFET WITH 65.7-PERCENT POWER ADDED EFFICIENCY AT 850 MHZ
Authors: MOORE KE WEITZEL CE NORDQUIST KJ POND LL PALMOUR JW ALLEN S CARTER CH
Citation: Ke. Moore et al., 4H-SIC MESFET WITH 65.7-PERCENT POWER ADDED EFFICIENCY AT 850 MHZ, IEEE electron device letters, 18(2), 1997, pp. 69-70
STEADY-STATE CURRENT-VOLTAGE CHARACTERISTICS OF 4H-SIC THYRISTORS AT HIGH AND SUPERHIGH CURRENT DENSITIES
Authors: LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL SINGH R
Citation: Me. Levinshtein et al., STEADY-STATE CURRENT-VOLTAGE CHARACTERISTICS OF 4H-SIC THYRISTORS AT HIGH AND SUPERHIGH CURRENT DENSITIES, Semiconductor science and technology, 12(11), 1997, pp. 1498-1499
LOW-FREQUENCY NOISE IN 4H SILICON-CARBIDE
Authors: LEVINSHTEIN ME RUMYANTSEV SL PALMOUR JW SLATER DB
Citation: Me. Levinshtein et al., LOW-FREQUENCY NOISE IN 4H SILICON-CARBIDE, Journal of applied physics, 81(4), 1997, pp. 1758-1762
TURN-ON PROCESS IN 4H-SIC THYRISTORS
Authors: LEVINSHTEIN ME PALMOUR JW RUMYANETSEV SL SINGH R
Citation: Me. Levinshtein et al., TURN-ON PROCESS IN 4H-SIC THYRISTORS, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1177-1179
TEMPERATURE-DEPENDENCE OF TURN-ON PROCESS IN 4H-SIC THYRISTORS
Authors: DYAKONOVA NV LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL SINGH R
Citation: Nv. Dyakonova et al., TEMPERATURE-DEPENDENCE OF TURN-ON PROCESS IN 4H-SIC THYRISTORS, Electronics Letters, 33(10), 1997, pp. 914-915
6H SILICON-CARBIDE MOSFET MODELING FOR HIGH-TEMPERATURE ANALOG INTEGRATED-CIRCUITS (25-500-DEGREES-C)
Authors: REBELLO NS SHOUCAIR FS PALMOUR JW
Citation: Ns. Rebello et al., 6H SILICON-CARBIDE MOSFET MODELING FOR HIGH-TEMPERATURE ANALOG INTEGRATED-CIRCUITS (25-500-DEGREES-C), IEE proceedings. Circuits, devices and systems, 143(2), 1996, pp. 115-122
EXPERIMENTAL CHARACTERIZATION OF ELECTRON-HOLE GENERATION IN SILICON-CARBIDE
Authors: WANG Y COOPER JA MELLOCH MR SHEPPARD ST PALMOUR JW LIPKIN LA
Citation: Y. Wang et al., EXPERIMENTAL CHARACTERIZATION OF ELECTRON-HOLE GENERATION IN SILICON-CARBIDE, Journal of electronic materials, 25(5), 1996, pp. 899-907
IMPROVED OXIDATION PROCEDURES FOR REDUCED SIO2 SIC DEFECTS/
Authors: LIPKIN LA PALMOUR JW
Citation: La. Lipkin et Jw. Palmour, IMPROVED OXIDATION PROCEDURES FOR REDUCED SIO2 SIC DEFECTS/, Journal of electronic materials, 25(5), 1996, pp. 909-915
USE OF MINORITY-CARRIERS IN NOISE SPECTROSCOPY FOR THE DETERMINATION OF LOCAL-LEVEL PARAMETERS IN 6H-SIC
Authors: PALMOUR JW LEVINSHTEIN ME RUMYANTSEV SL
Citation: Jw. Palmour et al., USE OF MINORITY-CARRIERS IN NOISE SPECTROSCOPY FOR THE DETERMINATION OF LOCAL-LEVEL PARAMETERS IN 6H-SIC, Semiconductor science and technology, 11(8), 1996, pp. 1146-1150
EFFECT OF SUBSTRATE ORIENTATION AND CRYSTAL ANISOTROPY ON THE THERMALLY OXIDIZED SIO2 SIC/
Authors: SHENOY JN DAS MK COOPER JA MELLOCH MR PALMOUR JW
Citation: Jn. Shenoy et al., EFFECT OF SUBSTRATE ORIENTATION AND CRYSTAL ANISOTROPY ON THE THERMALLY OXIDIZED SIO2 SIC/, Journal of applied physics, 79(6), 1996, pp. 3042-3045
SILICON-CARBIDE HIGH-POWER DEVICES
Authors: WEITZEL CE PALMOUR JW CARTER CH MOORE K NORDQUIST KJ ALLEN S THERO C BHATNAGAR M
Citation: Ce. Weitzel et al., SILICON-CARBIDE HIGH-POWER DEVICES, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1732-1741
LOW-FREQUENCY NOISE IN 4H-SILICON CARBIDE JUNCTION FIELD-EFFECT TRANSISTORS
Authors: PALMOUR JW LEVINSHTEIN ME RUMYANTSEV SL SIMIN GS
Citation: Jw. Palmour et al., LOW-FREQUENCY NOISE IN 4H-SILICON CARBIDE JUNCTION FIELD-EFFECT TRANSISTORS, Applied physics letters, 68(19), 1996, pp. 2669-2671
CHARACTERIZATION AND OPTIMIZATION OF THE SIO2 SIC METAL-OXIDE-SEMICONDUCTOR INTERFACE/
Authors: SHENOY JN CHINDALORE GL MELLOCH MR COOPER JA PALMOUR JW IRVINE KG
Citation: Jn. Shenoy et al., CHARACTERIZATION AND OPTIMIZATION OF THE SIO2 SIC METAL-OXIDE-SEMICONDUCTOR INTERFACE/, Journal of electronic materials, 24(4), 1995, pp. 303-309
BROADENING OF NOISE SPECTRA IN SEMICONDUCTORS AND THE 1 F(1.5) PROBLEM/
Authors: DYAKONOVA NV LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL
Citation: Nv. Dyakonova et al., BROADENING OF NOISE SPECTRA IN SEMICONDUCTORS AND THE 1 F(1.5) PROBLEM/, Semiconductor science and technology, 10(8), 1995, pp. 1126-1130
A VERTICALLY INTEGRATED BIPOLAR STORAGE CELL IN 6H SILICON-CARBIDE FOR NONVOLATILE MEMORY APPLICATIONS
Authors: XIE W COOPER JA MELLOCH MR PALMOUR JW CARTER CH
Citation: W. Xie et al., A VERTICALLY INTEGRATED BIPOLAR STORAGE CELL IN 6H SILICON-CARBIDE FOR NONVOLATILE MEMORY APPLICATIONS, IEEE electron device letters, 15(6), 1994, pp. 212-214
4H-SIC MESFET WITH 2.8-W MM POWER-DENSITY AT 1.8-GHZ/
Authors: WEITZEL CE PALMOUR JW CARTER CH NORDQUIST KJ
Citation: Ce. Weitzel et al., 4H-SIC MESFET WITH 2.8-W MM POWER-DENSITY AT 1.8-GHZ/, IEEE electron device letters, 15(10), 1994, pp. 406-408
SCANNING-TUNNELING-MICROSCOPY WITH A LARGE-GAP SEMICONDUCTOR TIP
Authors: PACKARD WE DOW JD ROHRER H PALMOUR JW CARTER CH NICOLAIDES R
Citation: We. Packard et al., SCANNING-TUNNELING-MICROSCOPY WITH A LARGE-GAP SEMICONDUCTOR TIP, Europhysics letters, 26(2), 1994, pp. 97-102
NATURE OF THE 1 F NOISE IN 6H-SIC
Authors: LEVINSHTEIN ME PALMOUR JW RUMYANTSEV SL
Citation: Me. Levinshtein et al., NATURE OF THE 1 F NOISE IN 6H-SIC, Semiconductor science and technology, 9(11), 1994, pp. 2080-2084
6H-SILICON CARBIDE DEVICES AND APPLICATIONS
Authors: PALMOUR JW EDMOND JA KONG HS CARTER CH
Citation: Jw. Palmour et al., 6H-SILICON CARBIDE DEVICES AND APPLICATIONS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 461-465
DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES
Authors: PALMOUR JW EDMOND JA CARTER CH
Citation: Jw. Palmour et al., DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2129-2130
Risultati: 1-25 |