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Results: 1-12 |
Results: 12
ELECTRICAL CHARACTERIZATION OF SILICON-WAFER BONDING STRUCTURES
Authors: DIMITRAKIS P HATZANDROULIS S TSOUKALAS D STOIMENOS J PAPAIOANNOU GJ
Citation: P. Dimitrakis et al., ELECTRICAL CHARACTERIZATION OF SILICON-WAFER BONDING STRUCTURES, Solid-state electronics, 42(2), 1998, pp. 201-204
ION IRRADIATION-INDUCED DEFECTS IN EPITAXIAL GAAS-LAYERS
Authors: ARPATZANIS N VLASTOU R KONSTANTINIDIS G ASSMANN W PAPASTAMATIOU M GAZIS E PAPAIOANNOU GJ
Citation: N. Arpatzanis et al., ION IRRADIATION-INDUCED DEFECTS IN EPITAXIAL GAAS-LAYERS, Solid-state electronics, 42(2), 1998, pp. 277-282
OPTICAL AND RELATED PROPERTIES OF NATURAL ONE-DIMENSIONAL SEMICONDUCTORS BASED ON PBI AND SNI UNITS
Authors: KOUTSELAS IB MITZI DB PAPAVASSILIOU GC PAPAIOANNOU GJ KRAUTSCHEID H
Citation: Ib. Koutselas et al., OPTICAL AND RELATED PROPERTIES OF NATURAL ONE-DIMENSIONAL SEMICONDUCTORS BASED ON PBI AND SNI UNITS, Synthetic metals, 86(1-3), 1997, pp. 2171-2172
NEUTRON RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: PAPASTAMATIOU M ARPATZANIS N PAPAIOANNOU GJ PAPASTERGIOU C CHRISTOU A
Citation: M. Papastamatiou et al., NEUTRON RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 364-372
ELECTRICAL-PROPERTIES OF BURIED OXIDE-SILICON INTERFACE
Authors: DIMITRAKIS P PAPAIOANNOU GJ CRISTOLOVEANU S
Citation: P. Dimitrakis et al., ELECTRICAL-PROPERTIES OF BURIED OXIDE-SILICON INTERFACE, Journal of applied physics, 80(3), 1996, pp. 1605-1610
THE GAMMA-RAY RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: ARPATZANIS N PAPASTAMATIOU M PAPAIOANNOU GJ HATZOPOULOS Z KONSTANDINIDES G
Citation: N. Arpatzanis et al., THE GAMMA-RAY RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, Semiconductor science and technology, 10(11), 1995, pp. 1445-1451
HE ION RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: PAPAIOANNOU GJ PAPASTAMATIOU MJ CHRISTOU A
Citation: Gj. Papaioannou et al., HE ION RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of applied physics, 78(5), 1995, pp. 3066-3076
OPTICAL AND RELATED PROPERTIES OF SOME NATURAL 3-DIMENSIONAL AND LOWER-DIMENSIONAL SEMICONDUCTOR SYSTEMS
Authors: PAPAVASSILIOU GC KOUTSELAS IB LAGOUVARDOS DJ KAPOUTSIS J TERZIS A PAPAIOANNOU GJ
Citation: Gc. Papavassiliou et al., OPTICAL AND RELATED PROPERTIES OF SOME NATURAL 3-DIMENSIONAL AND LOWER-DIMENSIONAL SEMICONDUCTOR SYSTEMS, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 252, 1994, pp. 395-404
CORPORATE DIVIDEND POLICY RESPONSE TO THE TAX-REFORM ACT OF 1986
Authors: PAPAIOANNOU GJ SAVARESE CM
Citation: Gj. Papaioannou et Cm. Savarese, CORPORATE DIVIDEND POLICY RESPONSE TO THE TAX-REFORM ACT OF 1986, Financial management, 23(1), 1994, pp. 56-63
A FAST SOLUTION OF POISSONS-EQUATION IN FETS
Authors: KOURKOUTAS CD PAPAIOANNOU GJ
Citation: Cd. Kourkoutas et Gj. Papaioannou, A FAST SOLUTION OF POISSONS-EQUATION IN FETS, Solid-state electronics, 37(2), 1994, pp. 373-376
ON THE INTERFACE STATE DISTRIBUTION OF BN ON INP STRUCTURES
Authors: BATH A PAPAIOANNOU GJ LEPLEY B BARRADA M
Citation: A. Bath et al., ON THE INTERFACE STATE DISTRIBUTION OF BN ON INP STRUCTURES, Solid state communications, 89(6), 1994, pp. 549-551
CHARACTERIZATION OF THE BURIED OXIDE IN SOI STRUCTURES BY A RATE WINDOW METHOD
Authors: IOANNOUSOUGLERIDIS V PAPAIOANNOU GJ DIMITRAKIS P CRISTOLOVEANU S
Citation: V. Ioannousougleridis et al., CHARACTERIZATION OF THE BURIED OXIDE IN SOI STRUCTURES BY A RATE WINDOW METHOD, Journal of applied physics, 74(5), 1993, pp. 3298-3302
Risultati: 1-12 |