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Results:
1-10
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Results: 10
Authors:
PASCALDELANNOY F
SACKDA A
GIANI A
FOUCARAN A
BOYER A
Citation: F. Pascaldelannoy et al., FAST HUMIDITY SENSOR USING OPTOELECTRONIC DETECTION ON PULSED PELTIERDEVICE, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 165-170
Authors:
FOUCARAN A
SACKDA A
GIANI A
PASCALDELANNOY F
BOYER A
Citation: A. Foucaran et al., FLASH EVAPORATED LAYERS OF (BI2TE3-BI2SE3)(N) AND (BI2TE3-SB2TE3)(P), Materials science & engineering. B, Solid-state materials for advanced technology, 52(2-3), 1998, pp. 154-161
Authors:
GIANI A
BOULOUZ A
PASCALDELANNOY F
FOUCARAN A
BOYER A
Citation: A. Giani et al., MOCVD GROWTH OF BI2TE3 LAYERS USING DIETHYLTELLURIUM AS A PRECURSOR, Thin solid films, 315(1-2), 1998, pp. 99-103
Authors:
GIANI A
PASCALDELANNOY F
BOYER A
FOUCARAN A
GSCHWIND M
ANCEY P
Citation: A. Giani et al., ELABORATION OF BI2TE3 BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 303(1-2), 1997, pp. 1-3
Authors:
FOUCARAN A
PASCALDELANNOY F
GIANI A
SACKDA A
COMBETTE P
BOYER A
Citation: A. Foucaran et al., POROUS SILICON LAYERS USED FOR GAS SENSOR APPLICATIONS, Thin solid films, 297(1-2), 1997, pp. 317-320
Authors:
GIANI A
PASCALDELANNOY F
PODLECKI J
BOUGNOT G
Citation: A. Giani et al., ELECTRICAL CHARACTERISTICS OF GAIN(AS)SB LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 41(2), 1996, pp. 201-205
Authors:
PODLECKI J
GOUSKOV L
PASCAL F
PASCALDELANNOY F
GIANI A
Citation: J. Podlecki et al., PHOTODETECTION AT 3.65 MU-M IN THE ATMOSPHERIC WINDOW USING INAS0.91SB0.09 GAAS HETEROEPITAXY/, Semiconductor science and technology, 11(7), 1996, pp. 1127-1130
Authors:
GIANI A
PODLECKI J
PASCALDELANNOY F
BOUGNOT G
GOUSKOV L
CATINAUD C
Citation: A. Giani et al., ELABORATION AND CHARACTERIZATION OF INASSB GROWN ON GASB AND GAAS SUBSTRATES, Journal of crystal growth, 148(1-2), 1995, pp. 25-30
Authors:
ROYO F
GIANI A
PASCALDELANNOY F
GOUSKOV L
MALZAC JP
CAMASSEL J
Citation: F. Royo et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF THICK GASB BUFFER LAYERS GROWN ON 2-IN GAAS WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 169-173
Authors:
GIANI A
PASCALDELANNOY F
BOUGNOT G
ALLOGHO GG
BOUGNOT J
Citation: A. Giani et al., GROWTH AND CHARACTERIZATION OF N-TYPE (TE) DOPED METAL-ORGANIC VAPOR-PHASE EPITAXY GAINSB, Journal of the Electrochemical Society, 140(8), 1993, pp. 2406-2409
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