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Results: 1-16 |
Results: 16
DIFFRACTION ANOMALOUS FINE-STRUCTURE STUDY OF STRAINED GA1-XINXAS ON GAAS(001)
Authors: WOICIK JC CROSS JO BOULDIN CE RAVEL B PELLEGRINO JG STEINER B BOMPADRE SG SORENSEN LB MIYANO KE KIRKLAND JP
Citation: Jc. Woicik et al., DIFFRACTION ANOMALOUS FINE-STRUCTURE STUDY OF STRAINED GA1-XINXAS ON GAAS(001), Physical review. B, Condensed matter, 58(8), 1998, pp. 4215-4218
PHASE-CORRECT BOND LENGTHS IN CRYSTALLINE GEXSI1-X ALLOYS
Authors: WOICIK JC MIYANO KE KING CA JOHNSON RW PELLEGRINO JG LEE TL LU ZH
Citation: Jc. Woicik et al., PHASE-CORRECT BOND LENGTHS IN CRYSTALLINE GEXSI1-X ALLOYS, Physical review. B, Condensed matter, 57(23), 1998, pp. 14592-14595
BOND LENGTHS AND ELASTICITY IN STRAINED-LAYER SEMICONDUCTORS
Authors: WOICIK JC PELLEGRINO JG MIYANO KE
Citation: Jc. Woicik et al., BOND LENGTHS AND ELASTICITY IN STRAINED-LAYER SEMICONDUCTORS, Journal de physique. IV, 7(C2), 1997, pp. 687-689
STUDY OF PHONONS IN SEMICONDUCTOR SUPERLATTICES BY RAMAN-SCATTERING SPECTROSCOPY AND MICROSCOPIC MODEL CALCULATION
Authors: TALWAR DN ROUGHANI B PELLEGRINO JG AMIRTHARAJ P QADRI SB
Citation: Dn. Talwar et al., STUDY OF PHONONS IN SEMICONDUCTOR SUPERLATTICES BY RAMAN-SCATTERING SPECTROSCOPY AND MICROSCOPIC MODEL CALCULATION, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 143-146
BOND-LENGTH DISTORTIONS IN STRAINED SEMICONDUCTOR ALLOYS
Authors: WOICIK JC PELLEGRINO JG STEINER B MIYANO KE BOMPADRE SG SORENSEN LB LEE TL KHALID S
Citation: Jc. Woicik et al., BOND-LENGTH DISTORTIONS IN STRAINED SEMICONDUCTOR ALLOYS, Physical review letters, 79(25), 1997, pp. 5026-5029
THE USE OF X-RAY STANDING WAVES AND EVANESCENT-WAVE EMISSION TO STUDYBURIED STRAINED-LAYER HETEROSTRUCTURES
Authors: LEE TL QIAN Y LYMAN PF WOICIK JC PELLEGRINO JG BEDZYK MJ
Citation: Tl. Lee et al., THE USE OF X-RAY STANDING WAVES AND EVANESCENT-WAVE EMISSION TO STUDYBURIED STRAINED-LAYER HETEROSTRUCTURES, Physica. B, Condensed matter, 221(1-4), 1996, pp. 437-444
TIME-RESOLVED MEASUREMENTS OF THE POLARIZATION STATE OF 4-WAVE-MIXINGSIGNALS FROM GAAS MULTIPLE-QUANTUM WELLS
Authors: PAUL AE BOLGER IA SMIRL AL PELLEGRINO JG
Citation: Ae. Paul et al., TIME-RESOLVED MEASUREMENTS OF THE POLARIZATION STATE OF 4-WAVE-MIXINGSIGNALS FROM GAAS MULTIPLE-QUANTUM WELLS, Journal of the Optical Society of America. B, Optical physics, 13(5), 1996, pp. 1016-1025
QUANTUM CONDUCTANCE FLUCTUATIONS IN THE LARGE-SIZE-SCALE REGIME
Authors: RICHTER CA SEILER DG PELLEGRINO JG
Citation: Ca. Richter et al., QUANTUM CONDUCTANCE FLUCTUATIONS IN THE LARGE-SIZE-SCALE REGIME, Physical review. B, Condensed matter, 53(19), 1996, pp. 13086-13090
X-RAY REFLECTIVITY DETERMINATION OF INTERFACE ROUGHNESS CORRELATED WITH TRANSPORT-PROPERTIES OF (ALGA)AS GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES/
Authors: DURA JA PELLEGRINO JG RICHTER CA
Citation: Ja. Dura et al., X-RAY REFLECTIVITY DETERMINATION OF INTERFACE ROUGHNESS CORRELATED WITH TRANSPORT-PROPERTIES OF (ALGA)AS GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES/, Applied physics letters, 69(8), 1996, pp. 1134-1136
STRAIN AND RELAXATION IN INAS AND INGAAS FILMS GROWN ON GAAS(001)
Authors: WOICIK JC MIYANO KE PELLEGRINO JG SHAW PS SOUTHWORTH SH KARLIN BA
Citation: Jc. Woicik et al., STRAIN AND RELAXATION IN INAS AND INGAAS FILMS GROWN ON GAAS(001), Applied physics letters, 68(21), 1996, pp. 3010-3012
BUFFER LAYER-MODULATION-DOPED FIELD-EFFECT-TRANSISTOR INTERACTIONS AL0.33GA0.67AS GAAS SUPERLATTICE SYSTEM/
Authors: PELLEGRINO JG RICHTER CA DURA JA AMIRTHARAJ PM QADRI SB ROUGHANI B
Citation: Jg. Pellegrino et al., BUFFER LAYER-MODULATION-DOPED FIELD-EFFECT-TRANSISTOR INTERACTIONS AL0.33GA0.67AS GAAS SUPERLATTICE SYSTEM/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 787-791
ACCOMMODATION OF STRAIN IN ULTRATHIN INAS GAAS FILMS/
Authors: WOICIK JC PELLEGRINO JG SOUTHWORTH SH SHAW PS KARLIN BA BOULDIN CE MIYANO KE
Citation: Jc. Woicik et al., ACCOMMODATION OF STRAIN IN ULTRATHIN INAS GAAS FILMS/, Physical review. B, Condensed matter, 52(4), 1995, pp. 2281-2284
DETERMINATION OF THE COMPLEX REFRACTIVE-INDEX OF INDIVIDUAL QUANTUM-WELLS FROM DISTRIBUTED REFLECTANCE
Authors: HICKERNELL RK CHRISTENSEN DH PELLEGRINO JG WANG J LEBURTON JP
Citation: Rk. Hickernell et al., DETERMINATION OF THE COMPLEX REFRACTIVE-INDEX OF INDIVIDUAL QUANTUM-WELLS FROM DISTRIBUTED REFLECTANCE, Journal of applied physics, 75(6), 1994, pp. 3056-3059
SCALING OF THE NONLINEAR-OPTICAL CROSS-SECTIONS OF GAAS-ALGAAS MULTIPLE-QUANTUM-WELL HETERO N-I-P-IS
Authors: MCCALLUM DS CARTWRIGHT AN SMIRL AL TSENG WF PELLEGRINO JG COMAS J
Citation: Ds. Mccallum et al., SCALING OF THE NONLINEAR-OPTICAL CROSS-SECTIONS OF GAAS-ALGAAS MULTIPLE-QUANTUM-WELL HETERO N-I-P-IS, IEEE journal of quantum electronics, 30(12), 1994, pp. 2790-2797
SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE PROPERTIES OF THE THIN UNDERLYING STRAINED SI LAYER AND THE ROUGHNESS AT SIO2 SI INTERFACE/
Authors: NGUYEN NV CHANDLERHOROWITZ D AMIRTHARAJ PM PELLEGRINO JG
Citation: Nv. Nguyen et al., SPECTROSCOPIC ELLIPSOMETRY DETERMINATION OF THE PROPERTIES OF THE THIN UNDERLYING STRAINED SI LAYER AND THE ROUGHNESS AT SIO2 SI INTERFACE/, Applied physics letters, 64(20), 1994, pp. 2688-2690
INTERFACE ROUGHNESS OF SHORT-PERIOD ALAS GAAS SUPERLATTICES STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
Authors: NGUYEN NV PELLEGRINO JG AMIRTHARAJ PM SEILER DG QADRI SB
Citation: Nv. Nguyen et al., INTERFACE ROUGHNESS OF SHORT-PERIOD ALAS GAAS SUPERLATTICES STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Journal of applied physics, 73(11), 1993, pp. 7739-7746
Risultati: 1-16 |