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Results:
1-8
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Results: 8
Authors:
ROTELLI B
TARRICONE L
GOMBIA E
MOSCA R
PEROTIN M
Citation: B. Rotelli et al., PHOTOELECTRIC PROPERTIES OF GASB SCHOTTKY DIODES, Journal of applied physics, 81(4), 1997, pp. 1813-1819
Authors:
PEROTIN M
GOUSKOV L
LUQUET H
BARANOV A
HAMMADI Z
Citation: M. Perotin et al., BE+ IMPLANTED GAINASSB GASB PHOTODIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 40(1), 1996, pp. 63-66
Authors:
GOUSKOV L
PEROTIN M
ALMUNEAU G
LUQUET H
Citation: L. Gouskov et al., NEAR-INFRARED ELECTROABSORPTION IN P(+) N(-)/N(+) GASB DIODES/, Journal of applied physics, 79(1), 1996, pp. 49-52
Authors:
RMOU A
LUQUET H
GOUSKOV L
PEROTIN M
COUDRAY P
Citation: A. Rmou et al., CALCULATION OF ALLOY DISORDER INFLUENCE ON HOLE IONIZATION BEHAVIOR IN GA1-XALXSB COMPOUNDS, JPN J A P 1, 33(8), 1994, pp. 4657-4661
Authors:
PEROTIN M
COUDRAY P
ETCHEBERRY A
GOUSKOV L
DEBIEMMECHOUVY C
LUQUET H
Citation: M. Perotin et al., IMPROVEMENT OF DARK CURRENT OF GA(AL)SB MESA DIODES USING (NH4)(2)S TREATMENT, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 374-378
Authors:
PEROTIN M
COUDRAY P
GOUSKOV L
LUQUET H
LLINARES C
BONNET JJ
SOONCKINDT L
LAMBERT B
Citation: M. Perotin et al., PASSIVATION OF GASB BY SULFUR TREATMENT, Journal of electronic materials, 23(1), 1994, pp. 7-12
Authors:
PEROTIN M
PEREZ A
LUQUET H
GOUSKOV L
SABIR A
COUDRAY P
Citation: M. Perotin et al., BE-IMPLANTATION IN GA(AL)SB LAYERS - RADIATION-DAMAGE( ION), Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 53-57
Authors:
LUQUET H
GOUSKOV L
PEROTIN M
KARIM M
RMOU A
MOTTET S
Citation: H. Luquet et al., DEPENDENCE OF IMPACT IONIZATION COEFFICIENTS ON ELECTRIC-FIELD PROFILE AND INJECTION MODE-APPROXIMATIONS, Journal of applied physics, 74(1), 1993, pp. 635-638
Risultati:
1-8
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