Authors: FOURRE H PESANT JC SCHULER O CAPPY A

Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 255-255

Authors: FOURRE H PESANT JC SCHULER O CAPPY A

Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1008-1010

Authors: THIERY JF FAWAZ H PESANT JC LINH NT SALMER G

Citation: Jf. Thiery et al., BERYLLIUM ION-IMPLANTATION INTO GAAS AND PSEUDOMORPHIC ALGAAS INGAAS/GAAS HETEROSTRUCTURE/, Journal of electronic materials, 26(1), 1997, pp. 16-20

Authors: RIZK R THEYS B PESANT JC CHEVALLIER J AUCOUTURIER M PAJOT B

Citation: R. Rizk et al., DEUTERIUM EFFUSION FROM CRYSTALLINE N-TYPE GAAS(SI), Physical review. B, Condensed matter, 47(23), 1993, pp. 15523-15532

Authors: DEBIEMMECHOUVY C BALLUTAUD D PESANT JC ETCHEBERRY A

Citation: C. Debiemmechouvy et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS SURFACE-EXPOSED TO A RF HYDROGEN PLASMA, Applied physics letters, 62(18), 1993, pp. 2254-2255