ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

ANALYSIS OF ION-IMPLANTED SILICON USING HIGH-RESOLUTION X-RAY-DIFFRACTION

Authors: PESEK A

Citation: A. Pesek, ANALYSIS OF ION-IMPLANTED SILICON USING HIGH-RESOLUTION X-RAY-DIFFRACTION, Applied physics. A, Solids and surfaces, 58(3), 1994, pp. 141-147

CORRELATION BETWEEN INITIAL GROWTH PLANARITY AND EPILAYER TILTING IN THE VICINAL GAAS SI SYSTEM/

Authors: RIESZ F VARRIO J PESEK A LISCHKA K

Citation: F. Riesz et al., CORRELATION BETWEEN INITIAL GROWTH PLANARITY AND EPILAYER TILTING IN THE VICINAL GAAS SI SYSTEM/, Applied surface science, 75, 1994, pp. 248-251

SHORT-PERIOD CDTE(ZNTE) MNTE SUPERLATTICES - GROWTH AND CHARACTERIZATION/

Authors: ABRAMOF E FASCHINGER W SITTER H PESEK A

Citation: E. Abramof et al., SHORT-PERIOD CDTE(ZNTE) MNTE SUPERLATTICES - GROWTH AND CHARACTERIZATION/, Journal of crystal growth, 135(3-4), 1994, pp. 447-454

CDTE MNTE SHORT-PERIOD SUPERLATTICES - ELASTIC PROPERTIES/

Authors: ABRAMOF E FASCHINGER W SITTER H PESEK A

Citation: E. Abramof et al., CDTE MNTE SHORT-PERIOD SUPERLATTICES - ELASTIC PROPERTIES/, Applied physics letters, 64(1), 1994, pp. 49-51

ATOMIC LAYER EPITAXY OF CDTE-ZNTE AND CDTE-MNTE SUPERLATTICES

Authors: FASCHINGER W HAUZENBERGER F JUZA P PESEK A SITTER H

Citation: W. Faschinger et al., ATOMIC LAYER EPITAXY OF CDTE-ZNTE AND CDTE-MNTE SUPERLATTICES, Journal of electronic materials, 22(5), 1993, pp. 497-500

DISTRIBUTION OF STRAIN IN GE ION-IMPLANTED SILICON MEASURED BY HIGH-RESOLUTION X-RAY-DIFFRACTION

Authors: PESEK A KASTLER P LISCHKA K PALMETSHOFER L

Citation: A. Pesek et al., DISTRIBUTION OF STRAIN IN GE ION-IMPLANTED SILICON MEASURED BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 569-572

X-RAY-DIFFRACTOMETRY OF SMALL DEFECTS IN LAYERED SYSTEMS

Authors: HOLY V KUBENA J ABRAMOF E PESEK A KOPPENSTEINER E

Citation: V. Holy et al., X-RAY-DIFFRACTOMETRY OF SMALL DEFECTS IN LAYERED SYSTEMS, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 146-150

SIMULATION OF X-RAY-DIFFRACTION CURVES FROM ION-IMPLANTED WAFERS AND RELAXED II-VI SUPERLATTICES

Authors: PESEK A KASTLER P PALMETSHOFER L HAUZENBERGER F JUZA P FASCHINGER W LISCHKA K

Citation: A. Pesek et al., SIMULATION OF X-RAY-DIFFRACTION CURVES FROM ION-IMPLANTED WAFERS AND RELAXED II-VI SUPERLATTICES, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 177-180

X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE INHETEROEPITAXIAL LAYERS

Authors: HOLY V KUBENA J ABRAMOF E LISCHKA K PESEK A KOPPENSTEINER E

Citation: V. Holy et al., X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE INHETEROEPITAXIAL LAYERS, Journal of applied physics, 74(3), 1993, pp. 1736-1743

X-RAY ROCKING CURVE CHARACTERIZATION OF ZNTE LAYERS GROWN ON GAAS BY HOT-WALL EPITAXY

Authors: ABRAMOF E HINGERL K PESEK A SITTER H

Citation: E. Abramof et al., X-RAY ROCKING CURVE CHARACTERIZATION OF ZNTE LAYERS GROWN ON GAAS BY HOT-WALL EPITAXY, Semiconductor science and technology, 6(9A), 1991, pp. 80-82

LATTICE MISFIT AND RELATIVE TILT OF LATTICE PLANES IN SEMICONDUCTOR HETEROSTRUCTURES

Authors: PESEK A HINGERL K RIESZ F LISCHKA K

Citation: A. Pesek et al., LATTICE MISFIT AND RELATIVE TILT OF LATTICE PLANES IN SEMICONDUCTOR HETEROSTRUCTURES, Semiconductor science and technology, 6(7), 1991, pp. 705-708

Risultati: 1-11 |