Authors: NOVIKOV VA PESHEV VV

Citation: Va. Novikov et Vv. Peshev, EFFECT OF NONUNIFORM DISTRIBUTION OF RADIATION DEFECTS IN GAAS ON THEDLTS SPECTRA, Semiconductors, 32(4), 1998, pp. 366-371

Authors: BRUDNYI VN NOVIKOV VA PESHEV VV KOLIN NG NOIFEKH AI

Citation: Vn. Brudnyi et al., HIGH-TEMPERATURE ANNEALING AND NUCLEAR-TRANSMUTATION DOPING OF GAAS BOMBARDED BY REACTOR NEUTRONS, Semiconductors, 31(7), 1997, pp. 686-690

Authors: PESHEV VV SMORODINOV SV

Citation: Vv. Peshev et Sv. Smorodinov, HIGH-TEMPERATURE IRRADIATION OF GALLIUM-ARSENIDE, Semiconductors, 31(10), 1997, pp. 1060-1061

Authors: PESHEV VV SMORODINOV SV

Citation: Vv. Peshev et Sv. Smorodinov, THE W DEFECT IN N-TYPE INP, Semiconductors, 30(6), 1996, pp. 520-522