Authors: BORZDOV VM PETROVICH TA

Citation: Vm. Borzdov et Ta. Petrovich, MONTE-CARLO SIMULATION OF THE LOW-TEMPERATURE MOBILITY OF 2-DIMENSIONAL ELECTRONS IN A SILICON INVERSION LAYER, Semiconductors, 31(1), 1997, pp. 72-75

Authors: BORZDOV VM KOMAROV FF PETROVICH TA

Citation: Vm. Borzdov et al., EFFECTIVE POLARIZABILITY OF 2DEG IN SILICON INVERSION LAYER FOR IONIZED IMPURITY SCATTERING AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 188(2), 1995, pp. 5-8

Authors: BORZDOV VM KOMAROV FF PETROVICH TA VRUBEL MM ZHEVNYAK OG

Citation: Vm. Borzdov et al., EFFECT OF TEMPERATURE AND ELECTRON-CONCENTRATION ON THE EFFECTIVE POLARIZABILITY OF 2DEG IN THE SILICON INVERSION LAYER FOR SURFACE-ROUGHNESS SCATTERING, Physica status solidi. b, Basic research, 183(2), 1994, pp. 110000047-110000049