Authors: PIETAG F SCHWABE R GOTTSCHALCH V DIVENTRA M BITZ A STAEHLI JL

Citation: F. Pietag et al., ULTRATHIN GAAS-LAYERS EMBEDDED IN ALAS - A PERSPECTIVE FOR INTENSE SHORT-WAVELENGTH EMISSION, Microelectronic engineering, 43-4, 1998, pp. 561-565

Authors: BITZ A DIVENTRA M BALDERESCHI A STAEHLI JL PIETAG F GOTTSCHALCH V RHAN H SCHWABE R

Citation: A. Bitz et al., OPTICAL-PROPERTIES OF ULTRATHIN GAAS-LAYERS EMBEDDED IN ALXGA1-XAS, Physical review. B, Condensed matter, 57(4), 1998, pp. 2426-2430

Authors: SCHWABE R PIETAG F GOTTSCHALCH V WAGNER G DIVENTRA M BITZ A STAEHLI JL

Citation: R. Schwabe et al., BLUE LUMINESCENCE FROM ULTRATHIN GAAS-LAYERS EMBEDDED IN ALAS, Physical review. B, Condensed matter, 56(8), 1997, pp. 4329-4332

Authors: SCHWABE R GOTTSCHALCH V PIETAG F UNGER K DIVENTRA M BITZ A STAEHLI JL

Citation: R. Schwabe et al., ULTRATHIN GAAS-LAYERS EMBEDDED IN ALAS - THE OBSERVATION OF INTENSE SHORT-WAVELENGTH EMISSION, Physica status solidi. a, Applied research, 164(1), 1997, pp. 165-168

Authors: KIRPAL G GERHARDT M BENNDORF G SCHWABE R PIETAG F PIETZONKA I LIPPOLD G WAGNER G FRANZHELD R GOTTSCHALCH V

Citation: G. Kirpal et al., MOVPE GROWTH AND CHARACTERIZATION OF GAINAS(P) ON (001)INP USING DIETHYLTERTIARYBUTYLARSINE (DETBAS) AND TERTIARYBUTYLPHOSPHINE (TBP) AS THE GROUP-V SOURCES, Journal of crystal growth, 170(1-4), 1997, pp. 167-172

Authors: SCHWABE R PIETAG F FAULKNER M LASSEN S GOTTSCHALCH V FRANZHELD R BITZ A STAEHLI JL

Citation: R. Schwabe et al., OPTICAL INVESTIGATIONS ON ISOVALENT DELTA-LAYERS IN III-V SEMICONDUCTOR COMPOUNDS, Journal of applied physics, 77(12), 1995, pp. 6295-6299