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Results: 1-20 |
Results: 20
ON THE GROWTH-PROCESS OF A LAYERED MATERIAL ON A COVALENT SUBSTRATE -GASE SI/
Authors: JEDRECY N PINCHAUX R EDDRIEF M
Citation: N. Jedrecy et al., ON THE GROWTH-PROCESS OF A LAYERED MATERIAL ON A COVALENT SUBSTRATE -GASE SI/, Physica. B, Condensed matter, 248, 1998, pp. 67-73
SURFACE X-RAY-DIFFRACTION ON K SI(001)(2X1) AND CS/SI(001)(2X1)/
Authors: MEYERHEIM HL JEDRECY N SAUVAGESIMKIN M PINCHAUX R
Citation: Hl. Meyerheim et al., SURFACE X-RAY-DIFFRACTION ON K SI(001)(2X1) AND CS/SI(001)(2X1)/, Physical review. B, Condensed matter, 58(4), 1998, pp. 2118-2125
X-RAY SPECULAR REFLECTIVITY AND GRAZING-INCIDENCE X-RAY-DIFFRACTION OF NEW LANGMUIR-BLODGETT MULTILAYERS
Authors: GIANNINI C TAPFER L SAUVAGESIMKIN M GARREAU Y JEDRECY N VERON MB PINCHAUX R BURGHARD M ROTH S
Citation: C. Giannini et al., X-RAY SPECULAR REFLECTIVITY AND GRAZING-INCIDENCE X-RAY-DIFFRACTION OF NEW LANGMUIR-BLODGETT MULTILAYERS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 411-417
EPITAXY OF LAYERED COMPOUNDS - GASE ON SI(111)
Authors: JEDRECY N PINCHAUX R EDDRIEF M
Citation: N. Jedrecy et al., EPITAXY OF LAYERED COMPOUNDS - GASE ON SI(111), Physical review. B, Condensed matter, 56(15), 1997, pp. 9583-9588
RECONSTRUCTION AND CHEMICAL ORDERING AT THE SURFACE OF STRAINED (IN, GA) AS EPILAYERS
Authors: SAUVAGESIMKIN M GARREAU Y PINCHAUX R CAVANNA A VERON MB JEDRECY N LANDESMAN JP NAGLE J
Citation: M. Sauvagesimkin et al., RECONSTRUCTION AND CHEMICAL ORDERING AT THE SURFACE OF STRAINED (IN, GA) AS EPILAYERS, Applied surface science, 104, 1996, pp. 646-651
ATOMIC-STRUCTURE AND FAULTED BOUNDARIES IN THE GAAS(001) BETA(2X4) SURFACE AS DERIVED FROM X-RAY-DIFFRACTION AND LINE-SHAPE ANALYSIS
Authors: GARREAU Y SAUVAGESIMKIN M JEDRECY N PINCHAUX R VERON MB
Citation: Y. Garreau et al., ATOMIC-STRUCTURE AND FAULTED BOUNDARIES IN THE GAAS(001) BETA(2X4) SURFACE AS DERIVED FROM X-RAY-DIFFRACTION AND LINE-SHAPE ANALYSIS, Physical review. B, Condensed matter, 54(24), 1996, pp. 17638-17646
LOCAL ASPECTS OF THE AS-STABILIZED 2X3 RECONSTRUCTED (001) SURFACE OFSTRAINED INXGA1-XAS ALLOYS - A FIRST-PRINCIPLES STUDY
Authors: BELLAICHE L KUNC K SAUVAGESIMKIN M GARREAU Y PINCHAUX R
Citation: L. Bellaiche et al., LOCAL ASPECTS OF THE AS-STABILIZED 2X3 RECONSTRUCTED (001) SURFACE OFSTRAINED INXGA1-XAS ALLOYS - A FIRST-PRINCIPLES STUDY, Physical review. B, Condensed matter, 53(11), 1996, pp. 7417-7420
MOLECULAR PACKING IN NEW LANGMUIR-BLODGETT SYSTEMS INVESTIGATED BY X-RAY SPECULAR REFLECTIVITY AND GRAZING-INCIDENCE X-RAY-DIFFRACTION
Authors: GIANNINI C TAPFER L SAUVAGESIMKIN M GARREAU Y JEDRECY N VERON MB PINCHAUX R BURGHARD M ROTH S
Citation: C. Giannini et al., MOLECULAR PACKING IN NEW LANGMUIR-BLODGETT SYSTEMS INVESTIGATED BY X-RAY SPECULAR REFLECTIVITY AND GRAZING-INCIDENCE X-RAY-DIFFRACTION, Thin solid films, 288(1-2), 1996, pp. 272-278
HETEROEPITAXIAL GROWTH OF INAS ON GSAS(100) MEDIATED BY TE AT THE INTERFACE
Authors: RODRIGUES WN ETGENS VH SAUVAGESIMKIN M ROSSI G SIROTTI F PINCHAUX R ROCHET F
Citation: Wn. Rodrigues et al., HETEROEPITAXIAL GROWTH OF INAS ON GSAS(100) MEDIATED BY TE AT THE INTERFACE, Solid state communications, 95(12), 1995, pp. 873-877
COMMENSURATE AND INCOMMENSURATE PHASES AT RECONSTRUCTED (IN,GA)AS(001) SURFACES - X-RAY-DIFFRACTION EVIDENCE FOR A COMPOSITION LOCK-IN
Authors: SAUVAGESIMKIN M GARREAU Y PINCHAUX R VERON MB LANDESMAN JP NAGLE J
Citation: M. Sauvagesimkin et al., COMMENSURATE AND INCOMMENSURATE PHASES AT RECONSTRUCTED (IN,GA)AS(001) SURFACES - X-RAY-DIFFRACTION EVIDENCE FOR A COMPOSITION LOCK-IN, Physical review letters, 75(19), 1995, pp. 3485-3488
STRUCTURAL APPROACH OF THE FE-SI(111) ANNEALED INTERFACE
Authors: SAUVAGESIMKIN M JEDRECY N WALDHAUER A PINCHAUX R
Citation: M. Sauvagesimkin et al., STRUCTURAL APPROACH OF THE FE-SI(111) ANNEALED INTERFACE, Physica. B, Condensed matter, 198(1-3), 1994, pp. 48-54
EPITAXIAL CONTINUED-LAYER STRUCTURE OF SB ON GAAS(110) AS OBSERVED BYGRAZING-INCIDENCE X-RAY-DIFFRACTION
Authors: BETTI MG MARIANI C JEDRECY N PINCHAUX R RUOCCO A SAUVAGESIMKIN M
Citation: Mg. Betti et al., EPITAXIAL CONTINUED-LAYER STRUCTURE OF SB ON GAAS(110) AS OBSERVED BYGRAZING-INCIDENCE X-RAY-DIFFRACTION, Physical review. B, Condensed matter, 50(19), 1994, pp. 14336-14339
STRUCTURAL-ANALYSIS OF THE (1X1)-BI GAAS(110) INTERFACE/
Authors: RUOCCO A JEDRECY N PINCHAUX R SAUVAGESIMKIN M WALDHAUER A BETTI MG MARIANI C
Citation: A. Ruocco et al., STRUCTURAL-ANALYSIS OF THE (1X1)-BI GAAS(110) INTERFACE/, Physical review. B, Condensed matter, 50(11), 1994, pp. 8004-8007
STRUCTURAL CHARACTERIZATION OF EPITAXIAL ALPHA-DERIVED FESI2 ON SI(111)
Authors: JEDRECY N WALDHAUER A SAUVAGESIMKIN M PINCHAUX R ZHENG Y
Citation: N. Jedrecy et al., STRUCTURAL CHARACTERIZATION OF EPITAXIAL ALPHA-DERIVED FESI2 ON SI(111), Physical review. B, Condensed matter, 49(7), 1994, pp. 4725-4730
DANGLING BOND STATES ON HGSE(110) SURFACE
Authors: ORLOWSKI BA KOWALSKI BJ BONNET J HRICOVINI C PINCHAUX R
Citation: Ba. Orlowski et al., DANGLING BOND STATES ON HGSE(110) SURFACE, Vacuum, 45(2-3), 1994, pp. 199-201
IN-SITU MONITORING OF THE C(4X4) TO THE 2X4 SURFACE PHASE-TRANSFORMATION ON GAAS(001) BY GRAZING-INCIDENCE X-RAY-DIFFRACTION
Authors: ETGENS VH SAUVAGESIMKIN M PINCHAUX R MASSIES J JEDRECY N WALDHAUER A GREISER N
Citation: Vh. Etgens et al., IN-SITU MONITORING OF THE C(4X4) TO THE 2X4 SURFACE PHASE-TRANSFORMATION ON GAAS(001) BY GRAZING-INCIDENCE X-RAY-DIFFRACTION, Surface science, 320(3), 1994, pp. 252-258
HYDROGEN-INDUCED DERELAXATION ON A MBE GROWN GAAS(110) SURFACE
Authors: RUOCCO A NANNARONE S SAUVAGESIMKIN M JEDRECY N PINCHAUX R WALDHAUER A
Citation: A. Ruocco et al., HYDROGEN-INDUCED DERELAXATION ON A MBE GROWN GAAS(110) SURFACE, Surface science, 309, 1994, pp. 662-667
EPITAXY OF BETA-FESI2 ON SI(111)
Authors: JEDRECY N ZHENG Y WALDHAUER A SAUVAGESIMKIN M PINCHAUX R
Citation: N. Jedrecy et al., EPITAXY OF BETA-FESI2 ON SI(111), Physical review. B, Condensed matter, 48(12), 1993, pp. 8801-8808
ZNTE GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH/
Authors: ETGENS VH SAUVAGESIMKIN M PINCHAUX R MASSIES J JEDRECY N WALDHAUER A TATARENKO S JOUNEAU PH
Citation: Vh. Etgens et al., ZNTE GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH/, Physical review. B, Condensed matter, 47(16), 1993, pp. 10607-10612
FORMATION OF THE ZNTE (001) GAAS INTERFACE
Authors: TATARENKO S CIBERT J SAMINADAYAR K JOUNEAU PH ETGENS VH SAUVAGESIMKIN M PINCHAUX R
Citation: S. Tatarenko et al., FORMATION OF THE ZNTE (001) GAAS INTERFACE, Journal of crystal growth, 127(1-4), 1993, pp. 339-342
Risultati: 1-20 |