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Results: 1-19 |
Results: 19
SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/
Authors: GUNNELLA R CASTRUCCI P PINTO N CUCCULELLI P DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/, Surface review and letters, 5(1), 1998, pp. 157-161
EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE
Authors: CASTRUCCI P GUNNELLA R PINTO N DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE, Surface science, 416(3), 1998, pp. 466-471
DICOPPER COMPLEXES WITH A DISSYMMETRIC DICOMPARTMENTAL SCHIFF BASE-OXIME LIGAND - SYNTHESIS, STRUCTURE, AND MAGNETIC-INTERACTIONS
Authors: RYBAKAKIMOVA EV BUSCH DH KAHOL PK PINTO N ALCOCK NW CLASE HJ
Citation: Ev. Rybakakimova et al., DICOPPER COMPLEXES WITH A DISSYMMETRIC DICOMPARTMENTAL SCHIFF BASE-OXIME LIGAND - SYNTHESIS, STRUCTURE, AND MAGNETIC-INTERACTIONS, Inorganic chemistry, 36(4), 1997, pp. 510-520
AN AL2O3 SENSOR FOR LOW HUMIDITY CONTENT - CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY
Authors: SBERVEGLIERI G ANCHISINI R MURRI R ERCOLI C PINTO N
Citation: G. Sberveglieri et al., AN AL2O3 SENSOR FOR LOW HUMIDITY CONTENT - CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY, Sensors and actuators. B, Chemical, 32(1), 1996, pp. 1-5
STRAIN RELAXATION THROUGH ISLANDS FORMATION IN EPITAXIAL SIGE THIN-FILMS
Authors: BARUCCA G LUCCHETTI L MAJNI G MENGUCCI P MURRI R PINTO N
Citation: G. Barucca et al., STRAIN RELAXATION THROUGH ISLANDS FORMATION IN EPITAXIAL SIGE THIN-FILMS, Applied surface science, 102, 1996, pp. 73-77
XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/
Authors: DAVOLI I GUNNELLA R CASTRUCCI P PINTO N BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/, Applied surface science, 102, 1996, pp. 102-106
X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/
Authors: GUNNELLA R CASTRUCCI P PINTO N DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/, Physical review. B, Condensed matter, 54(12), 1996, pp. 8882-8891
INTERFACE ORDERING IN SI-M GE-N MONOLAYER SUPERLATTICES - A PHOTOLUMINESCENCE STUDY/
Authors: CASALBONI M PINTO N IZZI B DAVOLI I DECRESCENZI M DEMATTEIS F PROSPOSITO P PIZZOFERRATO R
Citation: M. Casalboni et al., INTERFACE ORDERING IN SI-M GE-N MONOLAYER SUPERLATTICES - A PHOTOLUMINESCENCE STUDY/, Physical review. B, Condensed matter, 53(3), 1996, pp. 1030-1033
PHOTOCONDUCTIVITY OF AMORPHOUS GAAS
Authors: COSCIA U MURRI R PINTO N TROJANI L
Citation: U. Coscia et al., PHOTOCONDUCTIVITY OF AMORPHOUS GAAS, Journal of non-crystalline solids, 194(1-2), 1996, pp. 103-108
MAGNETIC STUDIES OF POLYMETALORGANOSILOXANES
Authors: DYAKONOV AJ MCCORMICK BJ KAHOL PK PINTO N LEVITSKY MM BUCHACHENKO AL
Citation: Aj. Dyakonov et al., MAGNETIC STUDIES OF POLYMETALORGANOSILOXANES, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 273, 1995, pp. 199-203
CHARACTERIZATION OF POROUS AL2O3 SIO2 SI SENSOR FOR LOW AND MEDIUM HUMIDITY RANGES/
Authors: SBERVEGLIERI G MURRI R PINTO N
Citation: G. Sberveglieri et al., CHARACTERIZATION OF POROUS AL2O3 SIO2 SI SENSOR FOR LOW AND MEDIUM HUMIDITY RANGES/, Sensors and actuators. B, Chemical, 23(2-3), 1995, pp. 177-180
THE PREDOMINANT CULTIVABLE MICROBIOTA OF OSSEOINTEGRATED IMPLANTS - PRELIMINARY REPORTS
Authors: CARRASCO E HERRERA R WILCKENS M MARCHESANI F PINTO N
Citation: E. Carrasco et al., THE PREDOMINANT CULTIVABLE MICROBIOTA OF OSSEOINTEGRATED IMPLANTS - PRELIMINARY REPORTS, Journal of dental research, 74(3), 1995, pp. 901-901
ISLANDS FORMATION CONDITIONS IN SILICON-GERMANIUM ALLOYS GROWN BY MBE
Authors: MURRI R PINTO N TROJANI L LUCCHETTI L MAJNI G MENGUCCI P
Citation: R. Murri et al., ISLANDS FORMATION CONDITIONS IN SILICON-GERMANIUM ALLOYS GROWN BY MBE, Journal of crystal growth, 157(1-4), 1995, pp. 255-259
INFLUENCE OF KINETIC ROUGHENING ON THE EPITAXIAL-GROWTH OF SILICON
Authors: CHEVRIER J CRUZ A PINTO N BERBEZIER I DERRIEN J
Citation: J. Chevrier et al., INFLUENCE OF KINETIC ROUGHENING ON THE EPITAXIAL-GROWTH OF SILICON, Journal de physique. I, 4(9), 1994, pp. 1309-1324
RAMAN-STUDY OF GALLIUM-ARSENIDE THIN-FILMS
Authors: DESNICA ID IVANDA M KRANJCEC M MURRI R PINTO N
Citation: Id. Desnica et al., RAMAN-STUDY OF GALLIUM-ARSENIDE THIN-FILMS, Journal of non-crystalline solids, 170(3), 1994, pp. 263-269
MULTIVARIATE-ANALYSIS OF PROGNOSTIC FACTORS IN ADULT PATIENTS WITH MEDULLOBLASTOMA - RETROSPECTIVE STUDY OF 156 PATIENTS
Authors: CARRIE C LASSET C ALAPETITE C HAIEMEDER C HOFFSTETTER S DEMAILLE MC KERR C WAGNER JP LAGRANGE JL MAIRE JP SENG SH MAN YOCTK MURRACIOLE X PINTO N
Citation: C. Carrie et al., MULTIVARIATE-ANALYSIS OF PROGNOSTIC FACTORS IN ADULT PATIENTS WITH MEDULLOBLASTOMA - RETROSPECTIVE STUDY OF 156 PATIENTS, Cancer, 74(8), 1994, pp. 2352-2360
SELECTIVE AND SENSITIVE HUMIDITY SENSOR-BASED ON BARIUM-CHLORIDE DIHYDRATE
Authors: SBERVEGLIERI G FAGLIA G RICCI R MURRI R PINTO N
Citation: G. Sberveglieri et al., SELECTIVE AND SENSITIVE HUMIDITY SENSOR-BASED ON BARIUM-CHLORIDE DIHYDRATE, Sensors and actuators. B, Chemical, 14(1-3), 1993, pp. 615-616
ELECTRONIC-TRANSPORT PROPERTIES OF UNHYDROGENATED AMORPHOUS GALLIUM-ARSENIDE
Authors: MURRI R PINTO N SCHIAVULLI L
Citation: R. Murri et al., ELECTRONIC-TRANSPORT PROPERTIES OF UNHYDROGENATED AMORPHOUS GALLIUM-ARSENIDE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 15(5), 1993, pp. 785-792
OPTICAL-PROPERTIES OF AMORPHOUS GALLIUM-ARSENIDE FILMS
Authors: MURRI R PINTO N
Citation: R. Murri et N. Pinto, OPTICAL-PROPERTIES OF AMORPHOUS GALLIUM-ARSENIDE FILMS, Journal of non-crystalline solids, 166, 1993, pp. 889-892
Risultati: 1-19 |