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Results: 1-10 |
Results: 10
SHORT-RANGE DISORDER IN LANTHANUM-DOPED LEAD TITANATE CERAMICS PROBEDBY RAMAN-SCATTERING
Authors: TAVARES ECS PIZANI PS EIRAS JA
Citation: Ecs. Tavares et al., SHORT-RANGE DISORDER IN LANTHANUM-DOPED LEAD TITANATE CERAMICS PROBEDBY RAMAN-SCATTERING, Applied physics letters, 72(8), 1998, pp. 897-899
ALLOYING EFFECTS ON THE CRITICAL LAYER THICKNESS IN INXGA1-XAS INP HETEROSTRUCTURES ANALYZED BY RAMAN-SCATTERING/
Authors: PIZANI PS BOSCHI TM LANCIOTTI F GROENEN J CARLES R MAIGNE P GENDRY M
Citation: Ps. Pizani et al., ALLOYING EFFECTS ON THE CRITICAL LAYER THICKNESS IN INXGA1-XAS INP HETEROSTRUCTURES ANALYZED BY RAMAN-SCATTERING/, Applied physics letters, 72(4), 1998, pp. 436-438
TENSILE AND COMPRESSIVE STRAIN RELIEF IN INXGA1-XAS EPILAYERS GROWN ON INP PROBED BY RAMAN-SCATTERING
Authors: GROENEN J LANDA G CARLES R PIZANI PS GENDRY M
Citation: J. Groenen et al., TENSILE AND COMPRESSIVE STRAIN RELIEF IN INXGA1-XAS EPILAYERS GROWN ON INP PROBED BY RAMAN-SCATTERING, Journal of applied physics, 82(2), 1997, pp. 803-809
CHARACTERIZATION OF GAAS WIRE CRYSTALS GROWN ON POROUS SILICON BY RAMAN-SCATTERING
Authors: DASILVA SW LUBYSHEV DI BASMAJI P PUSEP YA PIZANI PS GALZERANI JC KATIYAR RS MORELL G
Citation: Sw. Dasilva et al., CHARACTERIZATION OF GAAS WIRE CRYSTALS GROWN ON POROUS SILICON BY RAMAN-SCATTERING, Journal of applied physics, 82(12), 1997, pp. 6247-6250
MBE GROWTH AND RAMAN ANALYSIS OF [HHK]GAAS (SI OR CAF2) HIGHLY STRAINED HETEROSTRUCTURES
Authors: PUECH P DARAN E LANDA G FONTAINE C PIZANI PS CARLES R
Citation: P. Puech et al., MBE GROWTH AND RAMAN ANALYSIS OF [HHK]GAAS (SI OR CAF2) HIGHLY STRAINED HETEROSTRUCTURES, Microelectronics, 26(8), 1995, pp. 789-795
RAMAN-SCATTERING STUDY OF [HHK]-GAAS [SI OR CAF(2)] STRAINED HETEROSTRUCTURES (VOL 76, PG 2773, 1994)/
Authors: PUECH P LANDA G CARLES R PIZANI PS DARAN E FONTAINE C
Citation: P. Puech et al., RAMAN-SCATTERING STUDY OF [HHK]-GAAS [SI OR CAF(2)] STRAINED HETEROSTRUCTURES (VOL 76, PG 2773, 1994)/, Journal of applied physics, 77(6), 1995, pp. 2849-2849
STRAIN RELAXATION IN [001]-GAAS CAF2 AND [111]-GAAS/CAF2 ANALYZED BY RAMAN-SPECTROSCOPY/
Authors: PUECH P LANDA G CARLES R PIZANI PS DARAN E FONTAINE C
Citation: P. Puech et al., STRAIN RELAXATION IN [001]-GAAS CAF2 AND [111]-GAAS/CAF2 ANALYZED BY RAMAN-SPECTROSCOPY/, Journal of applied physics, 77(3), 1995, pp. 1126-1132
HIGH-STRAIN EFFECTS EVIDENCED BY RAMAN-SCATTERING IN ARSENIC CLUSTERSIN AS-IMPLANTED GAAS
Authors: PIZANI PS MLAYAH A GROENEN J CARLES R CLAVERIE A
Citation: Ps. Pizani et al., HIGH-STRAIN EFFECTS EVIDENCED BY RAMAN-SCATTERING IN ARSENIC CLUSTERSIN AS-IMPLANTED GAAS, Applied physics letters, 66(15), 1995, pp. 1927-1929
RAMAN-SCATTERING STUDY OF [HHK]-GAAS (SI OR CAF2) STRAINED HETEROSTRUCTURES/
Authors: PUECH P LANDA G CARLES R PIZANI PS DARAN E FONTAINE C
Citation: P. Puech et al., RAMAN-SCATTERING STUDY OF [HHK]-GAAS (SI OR CAF2) STRAINED HETEROSTRUCTURES/, Journal of applied physics, 76(5), 1994, pp. 2773-2780
AU AND AU-ZN CONTACTS ON P-GASB AND THE CHARACTERISTICS OF THE INTERFACES
Authors: GALZERANI JC OYAMA AM PIZANI PS LANDERS R MORELHAO SL CARDOSO LP
Citation: Jc. Galzerani et al., AU AND AU-ZN CONTACTS ON P-GASB AND THE CHARACTERISTICS OF THE INTERFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 328-331
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