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Results: 1-11 |
Results: 11
DRIFT MOBILITY OF EXCESS CARRIERS IN POROUS SILICON
Authors: LEBEDEV EA SMORGONSKAYA EA POLISSKI G
Citation: Ea. Lebedev et al., DRIFT MOBILITY OF EXCESS CARRIERS IN POROUS SILICON, Physical review. B, Condensed matter, 57(23), 1998, pp. 14607-14610
BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS
Authors: KOVALEV D HECKLER H BENCHORIN M POLISSKI G SCHWARTZKOPFF M KOCH F
Citation: D. Kovalev et al., BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS, Physical review letters, 81(13), 1998, pp. 2803-2806
ACCEPTOR DEPLETION IN P-TYPE POROUS SILICON
Authors: POLISSKI G DOLLINGER G BERGMAIER A KOVALEV D HECKLER H KOCH F
Citation: G. Polisski et al., ACCEPTOR DEPLETION IN P-TYPE POROUS SILICON, Physica status solidi. a, Applied research, 168(1), 1998, pp. 1-2
LUMINESCENCE OF POROUS SILICON IN A WEAK CONFINEMENT REGIME
Authors: POLISSKI G HECKLER H KOVALEV D SCHWARTZKOPFF M KOCH F
Citation: G. Polisski et al., LUMINESCENCE OF POROUS SILICON IN A WEAK CONFINEMENT REGIME, Applied physics letters, 73(8), 1998, pp. 1107-1109
SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY
Authors: KOVALEV D BENCHORIN M DIENER J AVERBOUKH B POLISSKI G KOCH F
Citation: D. Kovalev et al., SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY, Physical review letters, 79(1), 1997, pp. 119-122
CONTROL OF SILICON NANOCRYSTALLITE SHAPE ASYMMETRY AND ORIENTATION ANISOTROPY BY LIGHT-ASSISTED ANODIZATION
Authors: POLISSKI G AVERBOUKH B KOVALEV D KOCH F
Citation: G. Polisski et al., CONTROL OF SILICON NANOCRYSTALLITE SHAPE ASYMMETRY AND ORIENTATION ANISOTROPY BY LIGHT-ASSISTED ANODIZATION, Applied physics letters, 70(9), 1997, pp. 1116-1118
POLARIZATION MEMORY INDUCED BY POLARIZED LIGHT-ASSISTED ANODIZATION OF N-TYPE SI
Authors: POLISSKI G ANDRIANOV AV KOVALEV D KOCH F
Citation: G. Polisski et al., POLARIZATION MEMORY INDUCED BY POLARIZED LIGHT-ASSISTED ANODIZATION OF N-TYPE SI, Thin solid films, 276(1-2), 1996, pp. 235-237
INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI
Authors: BENCHORIN M AVERBOUKH B KOVALEV D POLISSKI G KOCH F
Citation: M. Benchorin et al., INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI, Physical review letters, 77(4), 1996, pp. 763-766
POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON
Authors: KOCH F KOVALEV D AVERBOUKH B POLISSKI G BENCHORIN M
Citation: F. Koch et al., POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON, Journal of luminescence, 70, 1996, pp. 320-332
THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON
Authors: KOVALEV D POLISSKI G BENCHORIN M DIENER J KOCH F
Citation: D. Kovalev et al., THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON, Journal of applied physics, 80(10), 1996, pp. 5978-5983
LUMINESCENCE ENHANCEMENT BY ELECTROCHEMICAL ETCHING OF SIC(6H)
Authors: PETROVAKOCH V SRESELI O POLISSKI G KOVALEV D MUSCHIK T KOCH F
Citation: V. Petrovakoch et al., LUMINESCENCE ENHANCEMENT BY ELECTROCHEMICAL ETCHING OF SIC(6H), Thin solid films, 255(1-2), 1995, pp. 107-110
Risultati: 1-11 |