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Results: 1-25/26
Authors:
OUERFELLI J
JLAIEL Z
GUETTARI N
GOURMELON E
POUZET J
BERNEDE JC
KHELIL A
ZOATER M
CONAN A
Citation: J. Ouerfelli et al., ABOUT THE NECESSITY OF A NICKEL LAYER TO OBTAIN PHOTOCONDUCTIVE MOSE2, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(2), 1998, pp. 135-139
Authors:
GUETTARI N
OUERFELLI J
BERNEDE JC
KHELIL A
POUZET J
CONAN A
Citation: N. Guettari et al., PHOTOCONDUCTIVE WSE2 THIN-FILMS OBTAINED BY SOLID-STATE REACTION IN THE PRESENCE OF A THIN NICKEL LAYER, Materials chemistry and physics, 52(1), 1998, pp. 83-88
Authors:
MARSILLAC S
BENCHOUK K
ELMOCTAR C
BERNEDE JC
POUZET J
KHELLIL A
JAMALI M
Citation: S. Marsillac et al., CUALSE2 THIN-FILMS OBTAINED BY CHALCOGENIZATION, Journal de physique. III, 7(11), 1997, pp. 2165-2169
Authors:
GOURMELON E
LIGNIER O
HADOUDA H
COUTURIER G
BERNEDE JC
TEDD J
POUZET J
SALARDENNE J
Citation: E. Gourmelon et al., MS2 (M=W, MO) PHOTOSENSITIVE THIN-FILMS FOR SOLAR-CELLS, Solar energy materials and solar cells, 46(2), 1997, pp. 115-121
Authors:
HADOUDA H
BERNEDE JC
POUZET J
LENY R
Citation: H. Hadouda et al., PHYSICOCHEMICAL CHARACTERIZATION OF MOS2 FILMS OBTAINED BY SOLID-STATE REACTION BETWEEN THE CONSTITUENTS OF A MULTILAYER MO S.../MO/S STRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 9-16
Authors:
MARSILLAC S
BERNEDE JC
ELMOCTAR C
POUZET J
Citation: S. Marsillac et al., PHYSICOCHEMICAL CHARACTERIZATION OF CUALSE2 FILMS OBTAINED BY REACTION, INDUCED BY ANNEALING, BETWEEN SE VAPOR AND AL CN/AL...CU/AL/CU THIN-FILMS SEQUENTIALLY DEPOSITED/, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 69-75
Authors:
LI SJ
BERNEDE JC
POUZET J
LENY R
Citation: Sj. Li et al., THICK (DELTA-GREATER-THAN-OR-EQUAL-TO-300 NM) WS2 FILMS OBTAINED ON UNPOLISHED GLASS SUBSTRATES, Materials chemistry and physics, 48(2), 1997, pp. 124-128
Authors:
GOURMELON E
HADOUDA H
BERNEDE JC
POUZET J
Citation: E. Gourmelon et al., HIGH-QUALITY CRYSTALLINE MOS2 THIN-FILMS OBTAINED ON NI COATED SUBSTRATES - OPTIMIZATION OF THE POSTANNEALING TREATMENT, Vacuum, 48(6), 1997, pp. 509-514
Authors:
BERNEDE JC
LI SJ
POUZET J
MARIE AM
Citation: Jc. Bernede et al., PROPERTIES OF WS2 THIN-FILMS OBTAINED BY SOLID-STATE REACTION, INDUCED BY ANNEALING, BETWEEN W-CONSTITUENTS AND S-CONSTITUENTS SEQUENTIALLYDEPOSITED IN THIN-FILM FORM - INFLUENCE OF THE ANNEALING TIME, Thin solid films, 292(1-2), 1997, pp. 69-74
Authors:
GOURMELON E
BERNEDE JC
POUZET J
SORENSEN G
Citation: E. Gourmelon et al., PHOTOCONDUCTIVE MOS2 THIN-FILMS OBTAINED AT LOW-TEMPERATURE (T-LESS-THAN-865 K), Physica status solidi. a, Applied research, 161(2), 1997, pp. 5-6
Authors:
HADOUDA H
BERNEDE JC
GOURMELON E
POUZET J
Citation: H. Hadouda et al., EXPERIMENTAL OBVIOUSNESS OF THE NECESSITY FOR A THIN NI INTERFACIAL LAYER TO OBTAIN HIGHLY ORDERED PHOTOCONDUCTIVE MOS2 FILMS, Journal of Materials Science, 32(15), 1997, pp. 4019-4024
Authors:
BERNEDE JC
HADOUDA H
LI SJ
ESSAIDI H
POUZET J
KHELIL A
Citation: Jc. Bernede et al., IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF LAYERED SEMICONDUCTOR THIN-FILMS BY IODINE TREATMENT, Journal de physique. III, 6(12), 1996, pp. 1697-1704
Authors:
LI SJ
BERNEDE JC
POUZET J
JAMALI M
Citation: Sj. Li et al., WS2 THIN-FILMS PREPARED BY SOLID-STATE REACTION (INDUCED BY ANNEALING) BETWEEN THE CONSTITUENTS IN THIN-FILM FORM, Journal of physics. Condensed matter, 8(14), 1996, pp. 2291-2304
Authors:
KHELIL A
ESSAIDI H
BERNEDE JC
POUZET J
MEBARKI M
Citation: A. Khelil et al., SYNTHESIZED TUNGSTEN DISELENIDE THIN-FILM S - PREPARATION AND CHARACTERIZATION, Annales de chimie, 21(5), 1996, pp. 295-300
Authors:
POUZET J
HADOUDA H
BERNEDE JC
LENY R
Citation: J. Pouzet et al., MOS2 THIN-FILMS OBTAINED BY A NEW TECHNIQUE - SOLID-STATE REACTION BETWEEN THE CONSTITUENTS IN THIN-FILM FORM, Journal of physics and chemistry of solids, 57(9), 1996, pp. 1363-1369
Authors:
HADOUDA H
POUZET J
BERNEDE JC
BARREAU A
Citation: H. Hadouda et al., MOS2 THIN-FILM SYNTHESIS BY SOFT SULFURIZATION OF A MOLYBDENUM LAYER, Materials chemistry and physics, 42(4), 1995, pp. 291-297
Authors:
ALAOUI ZK
BERNEDE JC
POUZET J
Citation: Zk. Alaoui et al., TEXTURED BINARY COMPOUND THIN-FILMS OBTAINED BY SUBSTITUTION OF THE CHALCOGEN OF A PRE-TEXTURED CHALCOGENIDE FILM, Vacuum, 46(4), 1995, pp. 373-378
Authors:
BERNEDE JC
POUZET J
Citation: Jc. Bernede et J. Pouzet, PREPARATION OF POLYCRYSTALLINE THIN-FILMS OF CHALCOGENIDES WITH REPRODUCIBLE PROPERTIES USING OVERLAPPING FILMS OF CONSTITUENTS, Le Vide, 50(270), 1994, pp. 1-15
Authors:
BERNEDE JC
POUZET J
Citation: Jc. Bernede et J. Pouzet, THIN TEXTURED FILMS ON CHALCOGENIDES AND OXIDES OF COMPOUNDS, OBTAINED BY SUBSTITUTION FROM AN INITIALLY ORIENTED FILM, Le Vide, 50(270), 1994, pp. 17-28
Authors:
BERNEDE JC
POUZET J
LENY R
BENNASRALLAH T
Citation: Jc. Bernede et al., GRAIN-BOUNDARY CONDUCTIVITY IN DIFFERENT POLYCRYSTALLINE MOSE2 THIN-FILMS, Journal de physique. III, 4(4), 1994, pp. 677-684
Authors:
KHELIL A
ESSAIDI H
BERNEDE JC
BOUACHERIA A
POUZET J
Citation: A. Khelil et al., WSE2 THIN-FILM REALIZATION BY SYNTHESIS AND BY TARNISHING, Journal of physics. Condensed matter, 6(41), 1994, pp. 8527-8537
Authors:
ESSAIDI H
BERNEDE JC
POUZET J
ZOAETER M
KHELIL A
Citation: H. Essaidi et al., TUNGSTEN DISELENIDE THIN-FILMS SYNTHESIZED ON TUNGSTEN FOILS, Materials science & engineering. B, Solid-state materials for advanced technology, 26(1), 1994, pp. 67-71
Authors:
POUZET J
BERNEDE JC
Citation: J. Pouzet et Jc. Bernede, PROPERTIES OF MOSE2 THIN-FILMS OBTAINED BY SOLID-STATE REACTIONS BETWEEN THIN-FILMS AND BY DC DIODE SPUTTERING, Materials chemistry and physics, 36(3-4), 1994, pp. 304-308
Authors:
HADOUDA H
POUZET J
ALAOUI ZK
MALLOUKY A
KHELIL A
BERNEDE JC
Citation: H. Hadouda et al., OBTENTION OF MOS2 THIN-FILMS BY SYNTHESIS, Annales de chimie, 19(7-8), 1994, pp. 473-476
Authors:
BERNEDE JC
BENHIDA S
MORSLI M
POUZET J
Citation: Jc. Bernede et al., STUDY ON RESISTANCE OF THIN POLYCRYSTALLINE FILMS OF WSE2, Le Vide, les couches minces, 49(265), 1993, pp. 1-11