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Results: 1-11 |
Results: 11
Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors
Authors: Rumyantsev, SL Pala, N Shur, MS Gaska, R Levinshtein, ME Khan, MA Simin, G Hu, X Yang, J
Citation: Sl. Rumyantsev et al., Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors, J APPL PHYS, 90(1), 2001, pp. 310-314
Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors
Authors: Rumyantsev, SL Pala, N Shur, MS Borovitskaya, E Dmitriev, AP Levinshtein, ME Gaska, R Khan, MA Yang, JW Hu, XH Simin, G
Citation: Sl. Rumyantsev et al., Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors, IEEE DEVICE, 48(3), 2001, pp. 530-534
Thin n-GaN films with low level of 1/f noise
Authors: Rumyantsev, SL Pala, N Shur, MS Gaska, R Levinshtein, ME Khan, MA Simin, G Hu, X Yang, J
Citation: Sl. Rumyantsev et al., Thin n-GaN films with low level of 1/f noise, ELECTR LETT, 37(11), 2001, pp. 720-721
Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors
Authors: Rumyantsev, SL Pala, N Shur, MS Gaska, R Levinshtein, ME Adivarahan, V Yang, J Simin, G Asif Khan, M
Citation: Sl. Rumyantsev et al., Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors, APPL PHYS L, 79(6), 2001, pp. 866-868
Highly doped thin-channel GaN-metal-semiconductor field-effect transistors
Authors: Gaska, R Shur, MS Hu, X Yang, JW Tarakji, A Simin, G Khan, A Deng, J Werner, T Rumyantsev, S Pala, N
Citation: R. Gaska et al., Highly doped thin-channel GaN-metal-semiconductor field-effect transistors, APPL PHYS L, 78(6), 2001, pp. 769-771
Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphiresubstrates
Authors: Pala, N Gaska, R Shur, H Yang, JW Khan, MA
Citation: N. Pala et al., Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphiresubstrates, MRS I J N S, 5, 2000, pp. NIL_526-NIL_531
Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
Authors: Rumyantsev, SL Pala, N Shur, MS Gaska, R Levinshtein, ME Khan, MA Simin, G Hu, X Yang, J
Citation: Sl. Rumyantsev et al., Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors, J APPL PHYS, 88(11), 2000, pp. 6726-6730
Low frequency noise in GaAs heterodimensional junction field effect transistors
Authors: Pala, N Lu, JQ Shur, MS
Citation: N. Pala et al., Low frequency noise in GaAs heterodimensional junction field effect transistors, ELECTR LETT, 36(7), 2000, pp. 675-677
Low-frequency noise in AlGaN/GaN MOS-HFETs
Authors: Pala, N Gaska, R Rumyantsev, S Shur, MS Khan, MA Hu, X Simin, G Yang, J
Citation: N. Pala et al., Low-frequency noise in AlGaN/GaN MOS-HFETs, ELECTR LETT, 36(3), 2000, pp. 268-270
SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors
Authors: Adivarahan, V Simin, G Yang, JW Lunev, A Khan, MA Pala, N Shur, M Gaska, R
Citation: V. Adivarahan et al., SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors, APPL PHYS L, 77(6), 2000, pp. 863-865
High temperature performance of ion implanted hetero-dimensional JFETs
Authors: Lu, JQ Pala, N Shur, M Hurt, MJ Peatman, WCB
Citation: Jq. Lu et al., High temperature performance of ion implanted hetero-dimensional JFETs, ELECTR LETT, 35(10), 1999, pp. 845-846
Risultati: 1-11 |