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Results: 1-25 | 26-48
Results: 1-25/48
Local and global bonding at the Si-SiO2 interface
Authors: Pantelides, ST Buczko, R Ramamoorthy, M Rashkeev, S Duscher, G Pennycook, SJ
Citation: St. Pantelides et al., Local and global bonding at the Si-SiO2 interface, SPR S MAT S, 46, 2001, pp. 193-218
Molecular electronics by the numbers
Authors: Pantelides, ST Di Ventra, M Lang, ND
Citation: St. Pantelides et al., Molecular electronics by the numbers, PHYSICA B, 296(1-3), 2001, pp. 72-77
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Authors: Chung, GY Tin, CC Williams, JR McDonald, K Chanana, RK Weller, RA Pantelides, ST Feldman, LC Holland, OW Das, MK Palmour, JW
Citation: Gy. Chung et al., Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide, IEEE ELEC D, 22(4), 2001, pp. 176-178
Core-hole effects on energy-loss near-edge structure
Authors: Duscher, G Buczko, R Pennycook, SJ Pantelides, ST
Citation: G. Duscher et al., Core-hole effects on energy-loss near-edge structure, ULTRAMICROS, 86(3-4), 2001, pp. 355-362
Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506
Authors: Rashkeev, SN Fleetwood, DM Schrimpf, RD Pantelides, ST
Citation: Sn. Rashkeev et al., Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506, PHYS REV L, 8716(16), 2001, pp. 5506
Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO2
Authors: Wang, SW Di Ventra, M Kim, SG Pantelides, ST
Citation: Sw. Wang et al., Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO2, PHYS REV L, 86(26), 2001, pp. 5946-5949
Control of doping by impurity chemical potentials: Predictions for p-type ZnO
Authors: Yan, YF Zhang, SB Pantelides, ST
Citation: Yf. Yan et al., Control of doping by impurity chemical potentials: Predictions for p-type ZnO, PHYS REV L, 86(25), 2001, pp. 5723-5726
Temperature effects on the transport properties of molecules
Authors: Di Ventra, M Kim, SG Pantelides, ST Lang, ND
Citation: M. Di Ventra et al., Temperature effects on the transport properties of molecules, PHYS REV L, 86(2), 2001, pp. 288-291
Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3
Authors: Kim, M Duscher, G Browning, ND Sohlberg, K Pantelides, ST Pennycook, SJ
Citation: M. Kim et al., Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3, PHYS REV L, 86(18), 2001, pp. 4056-4059
Hydrogen passivation and activation of oxygen complexes in silicon
Authors: Rashkeev, SN Di Ventra, M Pantelides, ST
Citation: Sn. Rashkeev et al., Hydrogen passivation and activation of oxygen complexes in silicon, APPL PHYS L, 78(11), 2001, pp. 1571-1573
Interactions of hydrogen with CeO2
Authors: Sohlberg, K Pantelides, ST Pennycook, SJ
Citation: K. Sohlberg et al., Interactions of hydrogen with CeO2, J AM CHEM S, 123(27), 2001, pp. 6609-6611
Surface reconstruction and the difference in surface acidity between gamma- and eta-alumina
Authors: Sohlberg, K Pantelides, ST Pennycook, SJ
Citation: K. Sohlberg et al., Surface reconstruction and the difference in surface acidity between gamma- and eta-alumina, J AM CHEM S, 123(1), 2001, pp. 26-29
Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation
Authors: Di Ventra, M Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation, J ELEC MAT, 29(3), 2000, pp. 353-358
Theory and simulations of the interactions of intense radiation with atoms, molecules, and solids
Authors: Alvarez, JJV Ferconi, M Pantelides, ST
Citation: Jjv. Alvarez et al., Theory and simulations of the interactions of intense radiation with atoms, molecules, and solids, LASER PART, 18(3), 2000, pp. 557-562
Hellmann-Feynman theorem and the definition of forces in quantum time-dependent and transport problems
Authors: Di Ventra, M Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Hellmann-Feynman theorem and the definition of forces in quantum time-dependent and transport problems, PHYS REV B, 61(23), 2000, pp. 16207-16212
The bulk and surface structure of gamma-alumina
Authors: Sohlberg, K Pennycook, SJ Pantelides, ST
Citation: K. Sohlberg et al., The bulk and surface structure of gamma-alumina, CHEM ENG CO, 181, 2000, pp. 107-135
Theoretical proposal: a tunable heterogeneous catalyst
Authors: Sohlberg, K Pantelides, ST Pennycook, SJ
Citation: K. Sohlberg et al., Theoretical proposal: a tunable heterogeneous catalyst, SURF SCI, 470(1-2), 2000, pp. L88-L92
Atomic-scale mechanisms of oxygen precipitation and thin-film oxidation ofSiC (vol 83, pg 1624, 1999)
Authors: Di Ventra, M Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Atomic-scale mechanisms of oxygen precipitation and thin-film oxidation ofSiC (vol 83, pg 1624, 1999), PHYS REV L, 85(8), 2000, pp. 1782-1782
Excitonic effects in core-excitation spectra of semiconductors
Authors: Buczko, R Duscher, G Pennycook, SJ Pantelides, ST
Citation: R. Buczko et al., Excitonic effects in core-excitation spectra of semiconductors, PHYS REV L, 85(10), 2000, pp. 2168-2171
Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possibleorigin of their contrasting properties
Authors: Buczko, R Pennycook, SJ Pantelides, ST
Citation: R. Buczko et al., Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possibleorigin of their contrasting properties, PHYS REV L, 84(5), 2000, pp. 943-946
First-principles calculation of transport properties of a molecular device
Authors: Di Ventra, M Pantelides, ST Lang, ND
Citation: M. Di Ventra et al., First-principles calculation of transport properties of a molecular device, PHYS REV L, 84(5), 2000, pp. 979-982
Atomic arrangement of iodine atoms inside single-walled carbon nanotubes
Authors: Fan, X Dickey, EC Eklund, PC Williams, KA Grigorian, L Buczko, R Pantelides, ST Pennycook, SJ
Citation: X. Fan et al., Atomic arrangement of iodine atoms inside single-walled carbon nanotubes, PHYS REV L, 84(20), 2000, pp. 4621-4624
Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation
Authors: Marka, Z Singh, SK Wang, W Lee, SC Kavich, J Glebov, B Rashkeev, SN Karmarkar, AP Albridge, RG Pantelides, ST Schrimpf, RD Fleetwood, DM Tolk, NH
Citation: Z. Marka et al., Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation, IEEE NUCL S, 47(6), 2000, pp. 2256-2261
Reactions of hydrogen with Si-SiO2 interfaces
Authors: Pantelides, ST Rashkeev, SN Buczko, R Fleetwood, DM Schrimpf, RD
Citation: St. Pantelides et al., Reactions of hydrogen with Si-SiO2 interfaces, IEEE NUCL S, 47(6), 2000, pp. 2262-2268
Defects and nanocrystals generated by Si implantation into a-SiO2
Authors: Nicklaw, CJ Pagey, MP Pantelides, ST Fleetwood, DM Schrimpf, RD Galloway, KF Wittig, JE Howard, BM Taw, E McNeil, WH Conley, JF
Citation: Cj. Nicklaw et al., Defects and nanocrystals generated by Si implantation into a-SiO2, IEEE NUCL S, 47(6), 2000, pp. 2269-2275
Risultati: 1-25 | 26-48