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Results: 1-10 |
Results: 10
Between two worlds - Medical student perceptions of humor and slang in thehospital setting
Authors: Parsons, GN Kinsman, SB Bosk, CL Sankar, P Ubel, PA
Citation: Gn. Parsons et al., Between two worlds - Medical student perceptions of humor and slang in thehospital setting, J GEN INT M, 16(8), 2001, pp. 544-549
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Authors: Chambers, JJ Busch, BW Schulte, WH Gustafsson, T Garfunkel, E Wang, S Maher, DM Klein, TM Parsons, GN
Citation: Jj. Chambers et al., Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon, APPL SURF S, 181(1-2), 2001, pp. 78-93
Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon
Authors: Chambers, JJ Parsons, GN
Citation: Jj. Chambers et Gn. Parsons, Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon, J APPL PHYS, 90(2), 2001, pp. 918-933
Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 degrees C) plasma deposited silicon dioxide films
Authors: Gupta, A Parsons, GN
Citation: A. Gupta et Gn. Parsons, Bond strain, chemical induction, and OH incorporation in low-temperature (350-100 degrees C) plasma deposited silicon dioxide films, J VAC SCI B, 18(3), 2000, pp. 1764-1769
Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates
Authors: Yang, CS Smith, LL Arthur, CB Parsons, GN
Citation: Cs. Yang et al., Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates, J VAC SCI B, 18(2), 2000, pp. 683-689
Surface reactions in very low temperature (< 150 degrees C) hydrogenated amorphous silicon deposition, and applications to thin film transistors
Authors: Parsons, GN
Citation: Gn. Parsons, Surface reactions in very low temperature (< 150 degrees C) hydrogenated amorphous silicon deposition, and applications to thin film transistors, J NON-CRYST, 266, 2000, pp. 23-30
Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics
Authors: Chambers, JJ Parsons, GN
Citation: Jj. Chambers et Gn. Parsons, Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics, APPL PHYS L, 77(15), 2000, pp. 2385-2387
Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution
Authors: Klein, TM Anderson, TM Chowdhury, AI Parsons, GN
Citation: Tm. Klein et al., Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution, J VAC SCI A, 17(1), 1999, pp. 108-112
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
Authors: Klein, TM Niu, D Epling, WS Li, W Maher, DM Hobbs, CC Hegde, RI Baumvol, IJR Parsons, GN
Citation: Tm. Klein et al., Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100), APPL PHYS L, 75(25), 1999, pp. 4001-4003
Endpoint uniformity sensing and analysis in silicon dioxide plasma etchingusing in situ mass spectrometry
Authors: Chambers, JJ Min, K Parsons, GN
Citation: Jj. Chambers et al., Endpoint uniformity sensing and analysis in silicon dioxide plasma etchingusing in situ mass spectrometry, J VAC SCI B, 16(6), 1998, pp. 2996-3002
Risultati: 1-10 |