Authors:
Maleev, NA
Krestnikov, IL
Kovsh, AR
Sakharov, AV
Zhukov, AE
Ustinov, VM
Mikhrin, SS
Passenberg, W
Pawlowski, E
Moller, C
Tsatsulnikov, AF
Kunzel, H
Ledentsov, NN
Alferov, ZI
Bimberg, D
Citation: Na. Maleev et al., InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range, PHYS ST S-B, 224(3), 2001, pp. 803-806
Authors:
Maleev, NA
Sakharov, AV
Moeller, C
Krestnikov, IL
Kovsh, AR
Mikhrin, SS
Zhukov, AE
Ustinov, VM
Passenberg, W
Pawlowski, E
Kunezel, H
Tsatsul'nikov, AF
Ledentsov, NN
Bimberg, D
Alferov, ZI
Citation: Na. Maleev et al., 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots, J CRYST GR, 227, 2001, pp. 1146-1150
Authors:
Mekonnen, GG
Schlaak, W
Bach, HG
Steingruber, R
Seeger, A
Engel, T
Passenberg, W
Umbach, A
Schramm, C
Unterborsch, G
van Waasen, S
Citation: Gg. Mekonnen et al., 37-GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s, IEEE PHOTON, 11(2), 1999, pp. 257-259
Authors:
Umbach, A
Engel, T
Bach, HG
van Waasen, S
Droge, E
Strittmatter, A
Ebert, W
Passenberg, W
Steingruber, R
Schlaak, W
Mekonnen, GG
Unterborsch, G
Bimberg, D
Citation: A. Umbach et al., Technology of InP-based 1.55-mu m ultrafast OEMMIC's: 40-Gbit/s broad-band38/60-GHz narrow-band photoreceivers, IEEE J Q EL, 35(7), 1999, pp. 1024-1031