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Results:
1-16
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Results: 16
Authors:
Vernon-Parry, KD
Abd-El-Rahman, KF
Brough, I
Evans-Freeman, JH
Zhang, J
Peaker, AR
Citation: Kd. Vernon-parry et al., The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures, MAT SC S PR, 4(1-3), 2001, pp. 121-123
Authors:
Vernon-Parry, KD
Evans-Freeman, JH
Hawkins, ID
Peaker, AR
Dawson, P
Citation: Kd. Vernon-parry et al., Separation of dislocation- and erbium-related photoluminescence by time resolved studies, MAT SCI E B, 81(1-3), 2001, pp. 56-58
Authors:
Kan, PYY
Abd El-Rahman, KF
Abdelgader, N
Evans-Freeman, JH
Peaker, AR
Citation: Pyy. Kan et al., High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 77-79
Authors:
Vernon-Parry, KD
Hawkins, ID
Evans-Freeman, JH
Dawson, P
Peaker, AR
Citation: Kd. Vernon-parry et al., A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium, MAT SCI E B, 81(1-3), 2001, pp. 164-166
Authors:
Goscinski, K
Dobaczewski, L
Nielsen, KB
Larsen, AN
Peaker, AR
Citation: K. Goscinski et al., High-resolution deep-level transient spectroscopy studies of gold and platinum acceptor states in diluted SiGe alloys - art. no. 235309, PHYS REV B, 6323(23), 2001, pp. 5309
Authors:
Huda, MQ
Peaker, AR
Citation: Mq. Huda et Ar. Peaker, Incorporation and optical activation of erbium in strained silicon-germanium structures, SOL ST ELEC, 45(11), 2001, pp. 1927-1930
Authors:
Vernon-Parry, KD
Evans-Freeman, JH
Hawkins, ID
Dawson, P
Peaker, AR
Citation: Kd. Vernon-parry et al., Effect of dislocations on the photoluminescence decay of 1.54 mu m emission from erbium-doped silicon, J APPL PHYS, 89(5), 2001, pp. 2715-2719
Authors:
Evans-Freeman, JH
Peaker, AR
Hawkins, ID
Kan, PYY
Terry, J
Rubaldo, L
Ahmed, M
Watts, S
Dobaczewski, L
Citation: Jh. Evans-freeman et al., High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon, MAT SC S PR, 3(4), 2000, pp. 237-241
Authors:
Peaker, AR
Evans-Freeman, JH
Kan, PYY
Hawkins, ID
Terry, J
Jeynes, C
Rubaldo, L
Citation: Ar. Peaker et al., Vacancy-related defects in ion implanted and electron irradiated silicon, MAT SCI E B, 71, 2000, pp. 143-147
Authors:
Naveed, AT
Evans-Freeman, JH
Vernon-Parry, KD
Wright, AC
Houghton, DC
Peaker, AR
Citation: At. Naveed et al., Erbium-doped Si1-xGex/Si structures for light emitting diodes, SEMIC SCI T, 15(2), 2000, pp. 91-97
Authors:
Rubaldo, L
Deixler, P
Hawkins, ID
Terry, J
Maude, DK
Portal, JC
Evans-Freeman, JH
Dobaczewski, L
Peaker, AR
Citation: L. Rubaldo et al., Gold-hydrogen complexes in silicon, MAT SCI E B, 58(1-2), 1999, pp. 126-129
Authors:
Peaker, AR
Evans-Freeman, JH
Kan, PYY
Rubaldo, L
Hawkins, ID
Vernon-Parry, KD
Dobaczewski, L
Citation: Ar. Peaker et al., Hydrogen reactions with electron irradiation damage in silicon, PHYSICA B, 274, 1999, pp. 243-246
Authors:
Dobaczewski, L
Nielsen, KB
Goscinski, K
Peaker, AR
Larsen, AN
Citation: L. Dobaczewski et al., Site preference next to germanium atom of gold and platinum impurities in SiGe alloy, PHYSICA B, 274, 1999, pp. 620-623
Authors:
Dobaczewski, L
Goscinski, K
Nielsen, KB
Larsen, AN
Hansen, JL
Peaker, AR
Citation: L. Dobaczewski et al., Alloy splitting of gold and platinum accentor levels in SiGe, PHYS REV L, 83(22), 1999, pp. 4582-4585
Authors:
Huda, MQ
Evans-Freeman, JH
Peaker, AR
Houghton, DC
Nejim, A
Citation: Mq. Huda et al., Luminescence from erbium implanted silicon-germanium quantum wells, J VAC SCI B, 16(6), 1998, pp. 2928-2933
Authors:
Naveed, AT
Huda, MQ
Abd El-Rahman, KF
Hartung, J
Evans-Freeman, JH
Peaker, AR
Houghton, DC
Jeynes, C
Gillin, WP
Citation: At. Naveed et al., Erbium in silicon-germanium quantum wells, J LUMINESC, 80(1-4), 1998, pp. 381-386
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