Authors:
Pelaz, L
Marques, LA
Gilmer, GH
Jaraiz, M
Barbolla, J
Citation: L. Pelaz et al., Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si, NUCL INST B, 180, 2001, pp. 12-16
Authors:
Marques, LA
Pelaz, L
Hernandez, J
Barbolla, J
Gilmer, GH
Citation: La. Marques et al., Stability of defects in crystalline silicon and their role in amorphization - art. no. 045214, PHYS REV B, 6404(4), 2001, pp. 5214
Authors:
Venezia, VC
Pelaz, L
Gossmann, HJL
Haynes, TE
Rafferty, CS
Citation: Vc. Venezia et al., Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon, APPL PHYS L, 79(9), 2001, pp. 1273-1275
Authors:
Jaraiz, M
Rubio, E
Castrillo, P
Pelaz, L
Bailon, L
Barbolla, J
Gilmer, GH
Rafferty, CS
Citation: M. Jaraiz et al., Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data, MAT SC S PR, 3(1-2), 2000, pp. 59-63
Citation: G. Hobler et al., Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion, J ELCHEM SO, 147(9), 2000, pp. 3494-3501
Authors:
Vuong, HH
Gossmann, HJ
Pelaz, L
Celler, GK
Jacobson, DC
Barr, D
Hergenrother, J
Monroe, D
Venezia, VC
Rafferty, CS
Hillenius, SJ
McKinley, J
Stevie, FA
Granger, C
Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085
Authors:
Venezia, VC
Haynes, TE
Agarwal, A
Pelaz, L
Gossmann, HJ
Jacobson, DC
Eaglesham, DJ
Citation: Vc. Venezia et al., Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon, APPL PHYS L, 74(9), 1999, pp. 1299-1301
Authors:
Pelaz, L
Gilmer, GH
Venezia, VC
Gossmann, HJ
Jaraiz, M
Barbolla, J
Citation: L. Pelaz et al., Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion, APPL PHYS L, 74(14), 1999, pp. 2017-2019