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Results: 1-12 |
Results: 12
Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Authors: Pelaz, L Marques, LA Gilmer, GH Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si, NUCL INST B, 180, 2001, pp. 12-16
Stability of defects in crystalline silicon and their role in amorphization - art. no. 045214
Authors: Marques, LA Pelaz, L Hernandez, J Barbolla, J Gilmer, GH
Citation: La. Marques et al., Stability of defects in crystalline silicon and their role in amorphization - art. no. 045214, PHYS REV B, 6404(4), 2001, pp. 5214
Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
Authors: Venezia, VC Pelaz, L Gossmann, HJL Haynes, TE Rafferty, CS
Citation: Vc. Venezia et al., Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon, APPL PHYS L, 79(9), 2001, pp. 1273-1275
Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
Authors: Jaraiz, M Rubio, E Castrillo, P Pelaz, L Bailon, L Barbolla, J Gilmer, GH Rafferty, CS
Citation: M. Jaraiz et al., Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data, MAT SC S PR, 3(1-2), 2000, pp. 59-63
Use of transient enhanced diffusion to tailor boron out-diffusion
Authors: Vuong, HH Xie, YH Frei, MR Hobler, G Pelaz, L Rafferty, CS
Citation: Hh. Vuong et al., Use of transient enhanced diffusion to tailor boron out-diffusion, IEEE DEVICE, 47(7), 2000, pp. 1401-1405
Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion
Authors: Hobler, G Pelaz, L Rafferty, CS
Citation: G. Hobler et al., Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion, J ELCHEM SO, 147(9), 2000, pp. 3494-3501
Continuum treatment of spatial correlation in damage annealing
Authors: Hobler, G Pelaz, L Rafferty, CS
Citation: G. Hobler et al., Continuum treatment of spatial correlation in damage annealing, NUCL INST B, 153(1-4), 1999, pp. 172-176
Boron pileup and clustering in silicon-on-insulator films
Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C
Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085
Activation and deactivation of implanted B in Si
Authors: Pelaz, L Venezia, VC Gossmann, HJ Gilmer, GH Fiory, AT Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Activation and deactivation of implanted B in Si, APPL PHYS L, 75(5), 1999, pp. 662-664
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Authors: Venezia, VC Haynes, TE Agarwal, A Pelaz, L Gossmann, HJ Jacobson, DC Eaglesham, DJ
Citation: Vc. Venezia et al., Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon, APPL PHYS L, 74(9), 1999, pp. 1299-1301
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Authors: Pelaz, L Gilmer, GH Gossmann, HJ Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., B cluster formation and dissolution in Si: A scenario based on atomistic modeling, APPL PHYS L, 74(24), 1999, pp. 3657-3659
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Authors: Pelaz, L Gilmer, GH Venezia, VC Gossmann, HJ Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion, APPL PHYS L, 74(14), 1999, pp. 2017-2019
Risultati: 1-12 |