ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

Wide optical band gap window layers for solar cells

Authors: Yu, ZR Pereyra, I Carreno, MNP

Citation: Zr. Yu et al., Wide optical band gap window layers for solar cells, SOL EN MAT, 66(1-4), 2001, pp. 155-162

Optimization of the i-layer width of Cr-a-Si : H PIN X-ray detectors

Authors: Estrada, M Cerdeira, A Leyva, A Carreno, MNP Pereyra, I

Citation: M. Estrada et al., Optimization of the i-layer width of Cr-a-Si : H PIN X-ray detectors, THIN SOL FI, 396(1-2), 2001, pp. 235-239

Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition

Authors: Scopel, WL Cuzinatto, RR Tabacniks, MH Fantini, MCA Alayo, MI Pereyra, I

Citation: Wl. Scopel et al., Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition, J NON-CRYST, 288(1-3), 2001, pp. 88-95

Improvements on the local order of amorphous hydrogenated silicon carbide films

Authors: Prado, RJ Fantini, MCA Tabacniks, MH Cardoso, CAV Pereyra, I Flank, AM

Citation: Rj. Prado et al., Improvements on the local order of amorphous hydrogenated silicon carbide films, J NON-CRYST, 283(1-3), 2001, pp. 1-10

Structural and morphological investigation of amorphous hydrogenated silicon carbide

Authors: Prado, RJ Fantini, MCA Pereyra, I Odo, GY Lepienski, CM

Citation: Rj. Prado et al., Structural and morphological investigation of amorphous hydrogenated silicon carbide, J APPL CRYS, 34, 2001, pp. 465-472

Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

Authors: Pereyra, I Villacorta, CA Carreno, MNP Prado, RJ Fantini, MCA

Citation: I. Pereyra et al., Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD, BRAZ J PHYS, 30(3), 2000, pp. 533-540

High deposition rate a-Si : H layers from pure SiH4 and from a 10% dilution of SiH4 in H-2

Authors: Estrada, M Cerdeira, A Pereyra, I Soto, S

Citation: M. Estrada et al., High deposition rate a-Si : H layers from pure SiH4 and from a 10% dilution of SiH4 in H-2, THIN SOL FI, 373(1-2), 2000, pp. 176-179

Mechanical properties of boron nitride thin films obtained by RF-PECVD at low temperatures

Authors: Vilcarromero, J Carreno, MNP Pereyra, I

Citation: J. Vilcarromero et al., Mechanical properties of boron nitride thin films obtained by RF-PECVD at low temperatures, THIN SOL FI, 373(1-2), 2000, pp. 273-276

p-type doping in a-Si1-xCx : H obtained by PECVD

Authors: Carreno, MNP Pereyra, I

Citation: Mnp. Carreno et I. Pereyra, p-type doping in a-Si1-xCx : H obtained by PECVD, J NON-CRYST, 266, 2000, pp. 699-703

Characteristics of high deposition rate pin diodes from pure SiH4 and 10% dilution of SiH4 in H-2

Authors: Estrada, M Cerdeira, A Pereyra, I Soto, BS

Citation: M. Estrada et al., Characteristics of high deposition rate pin diodes from pure SiH4 and 10% dilution of SiH4 in H-2, IEEE NUCL S, 47(1), 2000, pp. 33-35

Observation of negative differential resistance in mu c-Si : H/a-Si1-xCx :H double barrier devices

Authors: Yu, ZR Pereyra, I Carreno, MNP

Citation: Zr. Yu et al., Observation of negative differential resistance in mu c-Si : H/a-Si1-xCx :H double barrier devices, JPN J A P 1, 38(3A), 1999, pp. 1317-1319

P-I-N diodes on high deposition rate thick a-Si : H layers from pure SiH4

Authors: Estrada, M Pereyra, I

Citation: M. Estrada et I. Pereyra, P-I-N diodes on high deposition rate thick a-Si : H layers from pure SiH4, THIN SOL FI, 346(1-2), 1999, pp. 255-260

Risultati: 1-12 |