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Results: 1-7 |
Results: 7

Authors: Neyret, E Di Cioccio, L Bluet, JM Pernot, J Vicente, P Anglos, D Lagadas, M Billon, T
Citation: E. Neyret et al., Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications, MAT SCI E B, 80(1-3), 2001, pp. 332-336

Authors: Pernot, J Camassel, J Contreras, S Robert, JL Bluet, JM Michaud, JF Billon, T
Citation: J. Pernot et al., Control of Al-implantation doping in 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 362-365

Authors: Pernot, J Zawadzki, W Contreras, S Robert, JL Neyret, E Di Cioccio, L
Citation: J. Pernot et al., Electrical transport in n-type 4H silicon carbide, J APPL PHYS, 90(4), 2001, pp. 1869-1878

Authors: Bluet, JM Pernot, J Camassel, J Contreras, S Robert, JL Michaud, JF Billon, T
Citation: Jm. Bluet et al., Activation of aluminum implanted at high doses in 4H-SiC, J APPL PHYS, 88(4), 2000, pp. 1971-1977

Authors: Pernot, J Contreras, S Camassel, J Robert, JL Zawadzki, W Neyret, E Di Cioccio, L
Citation: J. Pernot et al., Free electron density and mobility in high-quality 4H-SiC, APPL PHYS L, 77(26), 2000, pp. 4359-4361

Authors: Namavar, F Colter, PC Planes, N Fraisse, B Pernot, J Juillaguet, S Camassel, J
Citation: F. Namavar et al., Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition, MAT SCI E B, 61-2, 1999, pp. 571-575

Authors: Michaud, J Hors, J Alagille, D Besanceney, JC Boubakeur, D Broyer, M Gabolde, M Gluckman, E Jacob, L Kanovitch, B Lefort, C Lery, N Marcelli-Barge, A Maroudy, D Martin, B Moretti, J Moulin, AM Pernot, J Tachon, JP Touraine, JL
Citation: J. Michaud et al., The 1999 bioethics laws revisited: thoughts and propositions, PRESSE MED, 28(28), 1999, pp. 1522-1524
Risultati: 1-7 |