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Results: 1-17 |
Results: 17
Low energy O-2(+) and N-2(+) beam-induced profile broadening effects in Si
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, Low energy O-2(+) and N-2(+) beam-induced profile broadening effects in Si, J VAC SCI A, 19(3), 2001, pp. 893-898
Interaction of defects and metals with nanocavities in silicon
Authors: Williams, JS Ridgway, MC Conway, MJ Wong-Leung, J Zhu, XF Petravic, M Fortuna, F Ruault, MO Bernas, H Kinomura, A Nakano, Y Hayashi, Y
Citation: Js. Williams et al., Interaction of defects and metals with nanocavities in silicon, NUCL INST B, 178, 2001, pp. 33-43
Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon
Authors: Stritzker, B Petravic, M Wong-Leung, J Williams, JS
Citation: B. Stritzker et al., Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon, NUCL INST B, 175, 2001, pp. 154-158
Electrical transients in the ion-beam-induced nitridation of silicon
Authors: Petravic, M Deenapanray, PNK
Citation: M. Petravic et Pnk. Deenapanray, Electrical transients in the ion-beam-induced nitridation of silicon, APPL PHYS L, 78(22), 2001, pp. 3445-3447
Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon
Authors: Stritzker, B Petravic, M Wong-Leung, J Williams, JS
Citation: B. Stritzker et al., Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon, APPL PHYS L, 78(18), 2001, pp. 2682-2684
GaAs delta-doped layers in Si for evaluation of SIMS depth resolution
Authors: Moon, DW Won, JY Kim, KJ Kim, HJ Kang, HJ Petravic, M
Citation: Dw. Moon et al., GaAs delta-doped layers in Si for evaluation of SIMS depth resolution, SURF INT AN, 29(6), 2000, pp. 362-368
On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment, SURF INT AN, 29(2), 2000, pp. 160-167
Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells
Authors: Deenapanray, PNK Fu, L Petravic, M Jagadish, C Gong, B Lamb, RN
Citation: Pnk. Deenapanray et al., Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells, SURF INT AN, 29(11), 2000, pp. 754-760
Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Authors: Petravic, M Deenapanray, PNK Comtet, G Hellner, L Dujardin, G Usher, BF
Citation: M. Petravic et al., Selective photon-stimulated desorption of hydrogen from GaAs surfaces, PHYS REV L, 84(10), 2000, pp. 2255-2258
Segregation effects of Li, K, and F in Si during depth profiling by oxygenions
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, Segregation effects of Li, K, and F in Si during depth profiling by oxygenions, J APPL PHYS, 87(5), 2000, pp. 2178-2184
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Authors: Deenapanray, PNK Tan, HH Cohen, MI Gaff, K Petravic, M Jagadish, C
Citation: Pnk. Deenapanray et al., Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells, J ELCHEM SO, 147(5), 2000, pp. 1950-1956
Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes
Authors: Hoffman, A Petravic, M Comtet, G Heurtel, A Hellner, L Dujardin, G
Citation: A. Hoffman et al., Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes, PHYS REV B, 59(4), 1999, pp. 3203-3209
Angular and energy dependence of the ion beam oxidation of Si using oxygenions from a duoplasmatron source
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, Angular and energy dependence of the ion beam oxidation of Si using oxygenions from a duoplasmatron source, SURF INT AN, 27(2), 1999, pp. 92-97
On the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low-energy oxygen ions
Authors: Dennapanray, PNK Petravic, M
Citation: Pnk. Dennapanray et M. Petravic, On the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low-energy oxygen ions, J APPL PHYS, 85(8), 1999, pp. 3993-3998
The role of oxygen on the stability of gettering of metals to cavities in silicon
Authors: Williams, JS Conway, MJ Wong-Leung, J Deenapanray, PNK Petravic, M Brown, RA Eaglesham, DJ Jacobson, DC
Citation: Js. Williams et al., The role of oxygen on the stability of gettering of metals to cavities in silicon, APPL PHYS L, 75(16), 1999, pp. 2424-2426
Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV
Authors: Cardenas, J Svensson, BG Petravic, M
Citation: J. Cardenas et al., Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV, J APPL PHYS, 84(9), 1998, pp. 4809-4814
On the nitridation of silicon by low energy nitrogen bombardment
Authors: Petravic, M Williams, JS Conway, M Deenapanray, PNK
Citation: M. Petravic et al., On the nitridation of silicon by low energy nitrogen bombardment, APPL PHYS L, 73(9), 1998, pp. 1287-1289
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