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Results: 1-24 |
Results: 24
The stability of Mott polarization analyzers
Authors: Petrov, VN Galaktionov, MS Kamochkin, AS
Citation: Vn. Petrov et al., The stability of Mott polarization analyzers, TECH PHYS, 46(12), 2001, pp. 1566-1569
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Denisov, DV Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Heitz, R Bimberg, D Zakharov, ND Werner, P Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Radiative recombination features of metastable quantum dot array
Authors: Talalaev, VG Novikov, BV Gobsch, G Goldhahn, R Stein, N Tomm, JW Maassdorf, A Cirlin, GE Petrov, VN Ustinov, VM
Citation: Vg. Talalaev et al., Radiative recombination features of metastable quantum dot array, PHYS ST S-B, 224(1), 2001, pp. 101-105
Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems
Authors: Cirlin, GE Petrov, VN Polyakov, NK Egorov, VA Samsonenko, YB Volovik, BV Denisov, DV Ustinov, VM Alferov, ZL Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems, IAN FIZ, 65(2), 2001, pp. 219-222
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Authors: Egorov, VA Polyakov, NK Tonkikh, AA Petrov, VN Cirlin, GE Volovik, BV Zhukov, AE Musikhin, YG Cherkashin, NA Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs, APPL SURF S, 175, 2001, pp. 243-248
Comparative tests of conventional and retarding-potential Mott polarimeters
Authors: Petrov, VN Galaktionov, MS Kamochkin, AS
Citation: Vn. Petrov et al., Comparative tests of conventional and retarding-potential Mott polarimeters, REV SCI INS, 72(9), 2001, pp. 3728-3730
Observation of an exchange-split alloy surface state
Authors: Schedin, F Hewitt, L Morrall, P Petrov, VN Thornton, G Guo, GY
Citation: F. Schedin et al., Observation of an exchange-split alloy surface state, PHYS REV B, 61(13), 2000, pp. 8932-8935
Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface
Authors: Tsyrlin, GE Samsonenko, YB Petrov, VN Polyakov, NK Egorov, VA Masalov, SA Gorbenko, OM Golubok, AO Soshnikov, IP Ustinov, VM
Citation: Ge. Tsyrlin et al., Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface, TECH PHYS L, 26(9), 2000, pp. 781-784
Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 mu m wavelength range
Authors: Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE Volovik, BV Zhukov, AE Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 mu m wavelength range, TECH PHYS L, 26(7), 2000, pp. 631-633
Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m
Authors: Tsyrlin, GE Polyakov, NK Egorov, VA Petrov, VN Volovik, BV Sizov, DS Tsatsul'nikov, AF Ustinov, VM
Citation: Ge. Tsyrlin et al., Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m, TECH PHYS L, 26(5), 2000, pp. 423-425
A computerized complex for recording and processing of reflected high-energy electron diffraction patterns
Authors: Petrov, VN Demidov, VN Korneeva, NP Polyakov, NK Tsyrlin, GE
Citation: Vn. Petrov et al., A computerized complex for recording and processing of reflected high-energy electron diffraction patterns, TECH PHYS, 45(5), 2000, pp. 618-622
Study of multilayer structures with InAs nanoobjects in a silicon matrix
Authors: Petrov, VN Polyakov, NK Egorov, VA Cirlin, GE Zakharov, ND Werner, P Ustinov, VM Denisov, DV Ledentsov, NN Alferov, ZI
Citation: Vn. Petrov et al., Study of multilayer structures with InAs nanoobjects in a silicon matrix, SEMICONDUCT, 34(7), 2000, pp. 810-814
Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces
Authors: Talalaev, VG Novikov, BV Verbin, SY Novikov, AB Thath, DS Shchur, IV Gobsch, G Goldhahn, R Stein, N Golombek, A Tsyrlin, GE Petrov, VN Ustinov, VM Zhukov, AE Egorov, AY
Citation: Vg. Talalaev et al., Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces, SEMICONDUCT, 34(4), 2000, pp. 453-461
The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m
Authors: Volovik, BV Sizov, DS Tsatsul'nikov, AF Musikhin, YG Ledentsov, NN Ustinov, VM Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE
Citation: Bv. Volovik et al., The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m, SEMICONDUCT, 34(11), 2000, pp. 1316-1320
1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
Authors: Egorov, VA Cirlin, GE Polyakov, NK Petrov, VN Tonkikh, AA Volovik, BV Musikhin, YG Zhukov, AE Tsatsul'nikov, AF Ustinov, VM
Citation: Va. Egorov et al., 1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates, NANOTECHNOL, 11(4), 2000, pp. 323-326
Effect of growth conditions on the formation of InAs quantum dots on Si(100)
Authors: Cirlin, GE Polyakov, NK Petrov, VN Samsonenko, YB Masalov, SA Golubok, AO Ledentsov, NN Bimberg, D Denisov, DV Busov, VM Ustinov, VM Alferov, ZI
Citation: Ge. Cirlin et al., Effect of growth conditions on the formation of InAs quantum dots on Si(100), IAN FIZ, 64(2), 2000, pp. 344-347
Magnetic properties of ultrathin epitaxial Fe3O4 films on Pt(111)
Authors: Schedin, F Morrall, P Petrov, VN Case, S Thomas, MF Dudzik, E van der Laan, G Thornton, G
Citation: F. Schedin et al., Magnetic properties of ultrathin epitaxial Fe3O4 films on Pt(111), J MAGN MAGN, 211(1-3), 2000, pp. 266-270
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
Authors: Zakharov, ND Werner, P Gosele, U Heitz, R Bimberg, D Ledentsov, NN Ustinov, VM Volovik, BV Alferov, ZI Polyakov, NK Petrov, VN Egorov, VA Cirlin, GE
Citation: Nd. Zakharov et al., Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate, APPL PHYS L, 76(19), 2000, pp. 2677-2679
Heteroepitaxial growth of InAs on Si: a new type of quantum dot
Authors: Cyrlin, GE Petrov, VN Dubrovskii, VG Samsonenko, YB Polyakov, NK Golubok, AO Masalov, SA Komyak, NI Ustinov, VM Egorov, AY Kovsh, AR Maximov, MV Tsatsul'nikov, AF Volovik, BV Zhukov, AE Kop'ev, PS Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Ge. Cyrlin et al., Heteroepitaxial growth of InAs on Si: a new type of quantum dot, SEMICONDUCT, 33(9), 1999, pp. 972-975
Self-organization of quantum dots in multilayer InAs GaAs and InGaAs GaAs structures in submonolayer epitaxy
Authors: Tsyrlin, GE Petrov, VN Masalov, SA Golubok, AO
Citation: Ge. Tsyrlin et al., Self-organization of quantum dots in multilayer InAs GaAs and InGaAs GaAs structures in submonolayer epitaxy, SEMICONDUCT, 33(6), 1999, pp. 677-680
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
Authors: Tsirlin, GE Petrov, VN Polyakov, NK Masalov, SA Golubok, AO Denisov, DV Kudryavtsev, YA Ber, BY Ustinov, VM
Citation: Ge. Tsirlin et al., Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic, SEMICONDUCT, 33(10), 1999, pp. 1054-1058
Exchange splitting of FeNi3(110) bulk and surface bands
Authors: Schedin, F Hewitt, L Morrall, P Petrov, VN Thornton, G
Citation: F. Schedin et al., Exchange splitting of FeNi3(110) bulk and surface bands, J MAGN MAGN, 199, 1999, pp. 555-557
Effect of growth conditions on InAs nanoislands formation on Si(100) surface
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Samsonenko, YB Denisov, DV Busov, VM Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Effect of growth conditions on InAs nanoislands formation on Si(100) surface, CZEC J PHYS, 49(11), 1999, pp. 1547-1552
The synthesis and immunogenic properties of peptide fragments of immunodominant regions of the VP1 protein of the Asia-1 type foot-and-mouth disease virus
Authors: Petrov, VN Rybakov, SS Petrova, ON Chepurkin, AV Gulenkin, VM
Citation: Vn. Petrov et al., The synthesis and immunogenic properties of peptide fragments of immunodominant regions of the VP1 protein of the Asia-1 type foot-and-mouth disease virus, BIOORG KHIM, 24(12), 1998, pp. 899-905
Risultati: 1-24 |