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Results:
1-8
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Results: 8
Authors:
Li, X
Heber, J
Pullin, M
Gevaux, D
Phillips, CC
Citation: X. Li et al., MBE growth of mid-infrared antimonide LEDs with strained electron barriers, J CRYST GR, 227, 2001, pp. 600-604
Authors:
Heber, JD
Gevaux, D
Li, X
Phillips, CC
Citation: Jd. Heber et al., Room temperature InAs/InAs1-xSbx single quantum well light emitting diodeswith barriers for improved carrier confinement, IEE P-OPTO, 147(6), 2000, pp. 407-411
Authors:
Serapiglia, GB
Paspalakis, E
Sirtori, C
Vodopyanov, KL
Phillips, CC
Citation: Gb. Serapiglia et al., Laser-induced quantum coherence in a semiconductor quantum well, PHYS REV L, 84(5), 2000, pp. 1019-1022
Authors:
Serapiglia, GB
Vodopyanov, KL
Phillips, CC
Citation: Gb. Serapiglia et al., Nonequilibrium electron distributions in a three-subband InGaAs/InAlAs quantum well studied via double resonance spectroscopy, APPL PHYS L, 77(6), 2000, pp. 857-859
Authors:
Phillips, CC
Wallace, BC
Hamilton, CB
Pursley, RT
Petty, GC
Bayne, CK
Citation: Cc. Phillips et al., The efficacy of material safety data sheets and worker acceptability, J SAFETY R, 30(2), 1999, pp. 113-122
Authors:
Pullin, MJ
Hardaway, HR
Heber, JD
Phillips, CC
Citation: Mj. Pullin et al., Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices, APPL PHYS L, 75(22), 1999, pp. 3437-3439
Authors:
Davies, PF
Phillips, CC
Roberts, C
Citation: Pf. Davies et al., All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry-Perot optical cavity, APPL PHYS L, 74(24), 1999, pp. 3717-3719
Authors:
Pullin, MJ
Hardaway, HR
Heber, JD
Phillips, CC
Yuen, WT
Stradling, RA
Moeck, P
Citation: Mj. Pullin et al., Room-temperature InAsSb strained-layer superlattice light-emitting diodes at lambda = 4.2 mu m with AlSb barriers for improved carrier confinement, APPL PHYS L, 74(16), 1999, pp. 2384-2386
Risultati:
1-8
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