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Results: 1-13 |
Results: 13
SIMS analysis of the oxidation behaviour of SiFeCr coated technical refractory metal alloys
Authors: Gritsch, M Piplits, K Barbist, R Wilhartitz, P Hutter, H
Citation: M. Gritsch et al., SIMS analysis of the oxidation behaviour of SiFeCr coated technical refractory metal alloys, MATER CORRO, 52(7), 2001, pp. 501-508
SIMS investigation of MoS2 based sputtercoatings
Authors: Heinisch, C Piplits, K Kubel, F Schintlmeister, A Pfluger, E Hutter, H
Citation: C. Heinisch et al., SIMS investigation of MoS2 based sputtercoatings, APPL SURF S, 179(1-4), 2001, pp. 269-274
SIMS: a capable method for BCN quantification
Authors: Kolber, T Piplits, K Dreer, S Mersdorf, E Haubner, R Hutter, H
Citation: T. Kolber et al., SIMS: a capable method for BCN quantification, APPL SURF S, 167(1-2), 2000, pp. 79-88
Investigations on the oxidation behavior of technical molybdenum foils by means of secondary-ion mass spectrometry
Authors: Gritsch, M Piplits, K Hutter, H Wilhartitz, P Wildner, H Martinz, HP
Citation: M. Gritsch et al., Investigations on the oxidation behavior of technical molybdenum foils by means of secondary-ion mass spectrometry, SURF SCI, 454, 2000, pp. 284-288
Characterization of the element distribution within TiN coatings with SIMS
Authors: Kolber, T Piplits, K Palmetshofer, L Hutter, H
Citation: T. Kolber et al., Characterization of the element distribution within TiN coatings with SIMS, MIKROCH ACT, 135(1-2), 2000, pp. 105-111
Quantitative sputter depth profiling of silicon- and aluminium oxynitride films
Authors: Dreer, S Wilhartitz, P Piplits, K Hutter, H Kopnarski, M Friedbacher, G
Citation: S. Dreer et al., Quantitative sputter depth profiling of silicon- and aluminium oxynitride films, MIKROCH ACT, 133(1-4), 2000, pp. 75-87
Investigations on the thermal cycling stability of SiFeCr coated NbWZr
Authors: Gritsch, M Piplits, K Barbist, R Wilhartitz, P Hutter, H
Citation: M. Gritsch et al., Investigations on the thermal cycling stability of SiFeCr coated NbWZr, MIKROCH ACT, 133(1-4), 2000, pp. 89-93
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Krasil'nik, ZF Stepikhova, MV Shmagin, VB Kuznetsov, VP Rubtsova, RA Uskova, EA Karpov, YA Ellmer, H Palmetshofer, L Piplits, K Hutter, H
Citation: Ay. Andreev et al., Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy, SEMICONDUCT, 33(2), 1999, pp. 131-134
Quantitative investigation of boron incorporation in polycrystalline CVD diamond films by SIMS
Authors: Kolber, T Piplits, K Haubner, R Hutter, H
Citation: T. Kolber et al., Quantitative investigation of boron incorporation in polycrystalline CVD diamond films by SIMS, FRESEN J AN, 365(8), 1999, pp. 636-641
Application of scanning SIMS techniques for the evaluation of the oxidation behavior of high-purity molybdenum
Authors: Gritsch, M Brunner, C Piplits, K Hutter, H Wilhartitz, P Schintlmeister, A Martinz, HP
Citation: M. Gritsch et al., Application of scanning SIMS techniques for the evaluation of the oxidation behavior of high-purity molybdenum, FRESEN J AN, 365(1-3), 1999, pp. 188-194
Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy
Authors: Andreev, AY Andreev, BA Drozdov, MN Ellmer, H Kuznetsov, VP Kalugin, NG Krasilnic, ZF Karpov, YA Palmetshofer, L Piplits, K Rubtsova, RA Stepikhova, MV Uskova, EA Shmagin, VB Hutter, H
Citation: Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399
Quantitative analysis of thin aluminium-oxynitride films by EPMA
Authors: Dreer, S Wilhartitz, P Mersdorf, E Piplits, K Friedbacher, G
Citation: S. Dreer et al., Quantitative analysis of thin aluminium-oxynitride films by EPMA, MIKROCH ACT, 131(3-4), 1999, pp. 211-218
Optical Er-doping of Si during sublimational molecular beam epitaxy
Authors: Andreev, BA Andreev, AY Ellmer, H Hutter, H Krasil'nik, ZF Kuznetsov, VP Lanzerstorfer, S Palmetshofer, L Piplits, K Rubtsova, RA Sokolov, NS Shmagin, VB Stepikhova, MV Uskova, EA
Citation: Ba. Andreev et al., Optical Er-doping of Si during sublimational molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 534-537
Risultati: 1-13 |