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Results: 1-9 |
Results: 9
MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations
Authors: Piquette, EC Zandian, M Edwall, DD Arias, JM
Citation: Ec. Piquette et al., MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations, J ELEC MAT, 30(6), 2001, pp. 627-631
The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices
Authors: Bandic, ZZ Bridger, PM Piquette, EC McGill, TC
Citation: Zz. Bandic et al., The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices, SOL ST ELEC, 44(2), 2000, pp. 221-228
Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain, J VAC SCI B, 17(4), 1999, pp. 1750-1752
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire
Authors: Piquette, EC Bridger, PM Bandic, ZZ McGill, TC
Citation: Ec. Piquette et al., Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire, J VAC SCI B, 17(3), 1999, pp. 1241-1245
Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain, SCANNING, 21(2), 1999, pp. 78-79
High voltage (450 V) GaN schottky rectifiers
Authors: Bandic, ZZ Bridger, PM Piquette, EC McGill, TC Vaudo, RP Phanse, VM Redwing, JM
Citation: Zz. Bandic et al., High voltage (450 V) GaN schottky rectifiers, APPL PHYS L, 74(9), 1999, pp. 1266-1268
Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy, APPL PHYS L, 74(23), 1999, pp. 3522-3524
Nitride based high power devices: Design and fabrication issues
Authors: Bandic, ZZ Piquette, EC Bridger, PM Beach, RA Kuech, TF McGill, TC
Citation: Zz. Bandic et al., Nitride based high power devices: Design and fabrication issues, SOL ST ELEC, 42(12), 1998, pp. 2289-2294
Correlation between the surface defect distribution and minority carrier transport properties in GaN
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Correlation between the surface defect distribution and minority carrier transport properties in GaN, APPL PHYS L, 73(23), 1998, pp. 3438-3440
Risultati: 1-9 |