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Results: 1-10 |
Results: 10
Electron phase coherence length in a lattice of antidots
Authors: Pouydebasque, A Pogosov, AG Budantsev, MV Maude, DK Plotnikov, AE Toropov, AI Portal, JC
Citation: A. Pouydebasque et al., Electron phase coherence length in a lattice of antidots, PHYSICA B, 298(1-4), 2001, pp. 287-290
Shift of geometrical resonances in a periodical lattice of antidots in tilted magnetic field
Authors: Pogosov, AG Budantsev, MV Pouydebasque, A Entin, MV Maude, DK Portal, JC Plotnikov, AE Toropov, AI Bakarov, AK
Citation: Ag. Pogosov et al., Shift of geometrical resonances in a periodical lattice of antidots in tilted magnetic field, PHYSICA B, 298(1-4), 2001, pp. 291-294
Two-dimensional array of diffusive SNS junctions with high-transparent interfaces - art. no. 180503
Authors: Baturina, TI Kvon, ZD Plotnikov, AE
Citation: Ti. Baturina et al., Two-dimensional array of diffusive SNS junctions with high-transparent interfaces - art. no. 180503, PHYS REV B, 6318(18), 2001, pp. 0503
Influence of dislocations on MBE Cd0.22Hg0.78Te/GaAs photodiodes
Authors: Romashko, LN Klimenko, AG Ovsyuk, VN Vasilyev, VV Voinov, VV Plotnikov, AE
Citation: Ln. Romashko et al., Influence of dislocations on MBE Cd0.22Hg0.78Te/GaAs photodiodes, PHYS ST S-A, 186(3), 2001, pp. 445-452
Proximity effects and Andreev reflection in a mesoscopic SNS junction withperfect NS interfaces
Authors: Kvon, ZD Baturina, TI Donaton, RA Baklanov, MR Maex, K Olshanetsky, EB Plotnikov, AE Portal, JC
Citation: Zd. Kvon et al., Proximity effects and Andreev reflection in a mesoscopic SNS junction withperfect NS interfaces, PHYS REV B, 61(17), 2000, pp. 11340-11343
Mesoscopic SNS junctions on the basis of superconducting PtSi films
Authors: Baturina, TI Kvon, ZD Donaton, RA Baklanov, MR Olshanetsky, EB Maex, K Plotnikov, AE Portal, JC
Citation: Ti. Baturina et al., Mesoscopic SNS junctions on the basis of superconducting PtSi films, PHYSICA B, 284, 2000, pp. 1860-1861
Quantum Hall effect in a single-mode wire
Authors: Kvon, ZD Ol'shanestkii, EB Katkov, MI Plotnikov, AE Toropov, AI Moshegov, NT Casse, M Portal, JC
Citation: Zd. Kvon et al., Quantum Hall effect in a single-mode wire, SEMICONDUCT, 33(11), 1999, pp. 1238-1240
Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si
Authors: Antonova, IV Misiuk, A Bak-Misiuk, J Popov, VP Plotnikov, AE Surma, B
Citation: Iv. Antonova et al., Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si, J ALLOY COM, 286(1-2), 1999, pp. 241-245
Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology
Authors: Antonova, IV Popov, VP Stas, VF Gutakovskii, AK Plotnikov, AE Obodnikov, VI
Citation: Iv. Antonova et al., Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology, MICROEL ENG, 48(1-4), 1999, pp. 383-386
Thermal donor and oxygen precipitate formation in silicon during 450 degrees C treatments under atmospheric and enhanced pressure
Authors: Antonova, IV Popov, VP Plotnikov, AE Misiuk, A
Citation: Iv. Antonova et al., Thermal donor and oxygen precipitate formation in silicon during 450 degrees C treatments under atmospheric and enhanced pressure, J ELCHEM SO, 146(4), 1999, pp. 1575-1578
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