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Results: 1-16 |
Results: 16
Characterization of profiling techniques for ultralow energy arsenic implants
Authors: Kasnavi, R Sun, Y Mount, G Pianetta, P Griffin, PB Plummer, JD
Citation: R. Kasnavi et al., Characterization of profiling techniques for ultralow energy arsenic implants, EL SOLID ST, 4(1), 2001, pp. G1-G3
Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation
Authors: Ngau, JL Griffin, PB Plummer, JD
Citation: Jl. Ngau et al., Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation, J APPL PHYS, 90(4), 2001, pp. 1768-1778
Study of the effect of grain boundary migration on hillock formation in Althin films
Authors: Kim, DK Nix, WD Vinci, RP Deal, MD Plummer, JD
Citation: Dk. Kim et al., Study of the effect of grain boundary migration on hillock formation in Althin films, J APPL PHYS, 90(2), 2001, pp. 781-788
Material and process limits in silicon VLSI technology
Authors: Plummer, JD Griffin, PB
Citation: Jd. Plummer et Pb. Griffin, Material and process limits in silicon VLSI technology, P IEEE, 89(3), 2001, pp. 240-258
Effect of ozone on algae as precursors for trihalomethane and haloacetic acid production
Authors: Plummer, JD Edzwald, JK
Citation: Jd. Plummer et Jk. Edzwald, Effect of ozone on algae as precursors for trihalomethane and haloacetic acid production, ENV SCI TEC, 35(18), 2001, pp. 3661-3668
Hydrogen passivation in plasma-etched polycrystalline silicon resistors
Authors: Tringe, JW Deal, MD Plummer, JD
Citation: Jw. Tringe et al., Hydrogen passivation in plasma-etched polycrystalline silicon resistors, EL SOLID ST, 3(11), 2000, pp. 517-519
A diffraction-based transmission electron microscope technique for measuring average grain size
Authors: Tringe, JW Deal, MD Plummer, JD
Citation: Jw. Tringe et al., A diffraction-based transmission electron microscope technique for measuring average grain size, EL SOLID ST, 3(11), 2000, pp. 520-523
Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation
Authors: Kim, D Nix, WD Deal, MD Plummer, JD
Citation: D. Kim et al., Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation, J MATER RES, 15(8), 2000, pp. 1709-1718
Microstructure of thermal hillocks on blanket Al thin films
Authors: Kim, D Heiland, B Nix, WD Arzt, E Deal, MD Plummer, JD
Citation: D. Kim et al., Microstructure of thermal hillocks on blanket Al thin films, THIN SOL FI, 371(1-2), 2000, pp. 278-282
Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects" - Ural, Griffin, and Plummer reply
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects" - Ural, Griffin, and Plummer reply, PHYS REV L, 85(22), 2000, pp. 4836-4836
Characterization of arsenic dose loss at the Si/SiO2 interface
Authors: Kasnavi, R Sun, Y Mo, R Pianetta, P Griffin, PB Plummer, JD
Citation: R. Kasnavi et al., Characterization of arsenic dose loss at the Si/SiO2 interface, J APPL PHYS, 87(5), 2000, pp. 2255-2260
Electrical and structural properties of polycrystalline silicon
Authors: Tringe, JW Plummer, JD
Citation: Jw. Tringe et Jd. Plummer, Electrical and structural properties of polycrystalline silicon, J APPL PHYS, 87(11), 2000, pp. 7913-7926
Transparent probe test structure for electrical and physical characterization of defects in thin films
Authors: Tringe, JW Deal, MD Plummer, JD
Citation: Jw. Tringe et al., Transparent probe test structure for electrical and physical characterization of defects in thin films, J ELCHEM SO, 147(12), 2000, pp. 4633-4638
Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures, PHYSICA B, 274, 1999, pp. 512-515
Self-diffusion in silicon: Similarity between the properties of native point defects
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Self-diffusion in silicon: Similarity between the properties of native point defects, PHYS REV L, 83(17), 1999, pp. 3454-3457
Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon, J APPL PHYS, 85(9), 1999, pp. 6440-6446
Risultati: 1-16 |