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Results:
1-7
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Results: 7
Authors:
Reverchon, JL
Huet, F
Poisson, MA
Duboz, JY
Damilano, B
Grandjean, N
Massies, J
Citation: Jl. Reverchon et al., Photoconductance measurements and Stokes shift in InGaN alloys, MAT SCI E B, 82(1-3), 2001, pp. 197-199
Authors:
Cassette, S
Delage, SL
Chartier, E
Floriot, D
Poisson, MA
Garcia, JC
Grattepain, C
Arroyo, JM
Plana, R
Bland, SW
Citation: S. Cassette et al., Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability, MAT SCI E B, 80(1-3), 2001, pp. 279-283
Authors:
Reverchon, JL
Poisson, MA
Duboz, JY
Citation: Jl. Reverchon et al., Recombination mechanisms in AlGaN and their effects on the response of ultraviolet detectors, SEMIC SCI T, 16(8), 2001, pp. 720-723
Authors:
Boudart, B
Gaquiere, C
Guhel, Y
de Jaeger, JC
Poisson, MA
Citation: B. Boudart et al., Electrical effects of SiNx deposition on GaN MESFETs, ELECTR LETT, 37(8), 2001, pp. 527-528
Authors:
Reverchon, JL
Huet, F
Poisson, MA
Duboz, JY
Citation: Jl. Reverchon et al., Photoconductance measurements on thin InGaN layers, J APPL PHYS, 88(9), 2000, pp. 5138-5141
Authors:
Ruterana, P
Aguinet, R
Poisson, MA
Citation: P. Ruterana et al., A TEM study of InGaN layers and quantum wells grown by MOCVD, PHYS ST S-B, 216(1), 1999, pp. 663-667
Authors:
Trassaert, S
Boudart, B
Gaquiere, C
Theron, D
Crosnier, Y
Huet, F
Poisson, MA
Citation: S. Trassaert et al., Trap effects studies in GaN MESFETs by pulsed measurements, ELECTR LETT, 35(16), 1999, pp. 1386-1388
Risultati:
1-7
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