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Results: 1-15 |
Results: 15
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Denisov, DV Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Heitz, R Bimberg, D Zakharov, ND Werner, P Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems
Authors: Cirlin, GE Petrov, VN Polyakov, NK Egorov, VA Samsonenko, YB Volovik, BV Denisov, DV Ustinov, VM Alferov, ZL Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems, IAN FIZ, 65(2), 2001, pp. 219-222
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Authors: Egorov, VA Polyakov, NK Tonkikh, AA Petrov, VN Cirlin, GE Volovik, BV Zhukov, AE Musikhin, YG Cherkashin, NA Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs, APPL SURF S, 175, 2001, pp. 243-248
Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface
Authors: Tsyrlin, GE Samsonenko, YB Petrov, VN Polyakov, NK Egorov, VA Masalov, SA Gorbenko, OM Golubok, AO Soshnikov, IP Ustinov, VM
Citation: Ge. Tsyrlin et al., Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface, TECH PHYS L, 26(9), 2000, pp. 781-784
Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 mu m wavelength range
Authors: Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE Volovik, BV Zhukov, AE Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 mu m wavelength range, TECH PHYS L, 26(7), 2000, pp. 631-633
Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m
Authors: Tsyrlin, GE Polyakov, NK Egorov, VA Petrov, VN Volovik, BV Sizov, DS Tsatsul'nikov, AF Ustinov, VM
Citation: Ge. Tsyrlin et al., Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m, TECH PHYS L, 26(5), 2000, pp. 423-425
A computerized complex for recording and processing of reflected high-energy electron diffraction patterns
Authors: Petrov, VN Demidov, VN Korneeva, NP Polyakov, NK Tsyrlin, GE
Citation: Vn. Petrov et al., A computerized complex for recording and processing of reflected high-energy electron diffraction patterns, TECH PHYS, 45(5), 2000, pp. 618-622
Study of multilayer structures with InAs nanoobjects in a silicon matrix
Authors: Petrov, VN Polyakov, NK Egorov, VA Cirlin, GE Zakharov, ND Werner, P Ustinov, VM Denisov, DV Ledentsov, NN Alferov, ZI
Citation: Vn. Petrov et al., Study of multilayer structures with InAs nanoobjects in a silicon matrix, SEMICONDUCT, 34(7), 2000, pp. 810-814
The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m
Authors: Volovik, BV Sizov, DS Tsatsul'nikov, AF Musikhin, YG Ledentsov, NN Ustinov, VM Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE
Citation: Bv. Volovik et al., The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m, SEMICONDUCT, 34(11), 2000, pp. 1316-1320
1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
Authors: Egorov, VA Cirlin, GE Polyakov, NK Petrov, VN Tonkikh, AA Volovik, BV Musikhin, YG Zhukov, AE Tsatsul'nikov, AF Ustinov, VM
Citation: Va. Egorov et al., 1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates, NANOTECHNOL, 11(4), 2000, pp. 323-326
Effect of growth conditions on the formation of InAs quantum dots on Si(100)
Authors: Cirlin, GE Polyakov, NK Petrov, VN Samsonenko, YB Masalov, SA Golubok, AO Ledentsov, NN Bimberg, D Denisov, DV Busov, VM Ustinov, VM Alferov, ZI
Citation: Ge. Cirlin et al., Effect of growth conditions on the formation of InAs quantum dots on Si(100), IAN FIZ, 64(2), 2000, pp. 344-347
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
Authors: Zakharov, ND Werner, P Gosele, U Heitz, R Bimberg, D Ledentsov, NN Ustinov, VM Volovik, BV Alferov, ZI Polyakov, NK Petrov, VN Egorov, VA Cirlin, GE
Citation: Nd. Zakharov et al., Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate, APPL PHYS L, 76(19), 2000, pp. 2677-2679
Heteroepitaxial growth of InAs on Si: a new type of quantum dot
Authors: Cyrlin, GE Petrov, VN Dubrovskii, VG Samsonenko, YB Polyakov, NK Golubok, AO Masalov, SA Komyak, NI Ustinov, VM Egorov, AY Kovsh, AR Maximov, MV Tsatsul'nikov, AF Volovik, BV Zhukov, AE Kop'ev, PS Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Ge. Cyrlin et al., Heteroepitaxial growth of InAs on Si: a new type of quantum dot, SEMICONDUCT, 33(9), 1999, pp. 972-975
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
Authors: Tsirlin, GE Petrov, VN Polyakov, NK Masalov, SA Golubok, AO Denisov, DV Kudryavtsev, YA Ber, BY Ustinov, VM
Citation: Ge. Tsirlin et al., Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic, SEMICONDUCT, 33(10), 1999, pp. 1054-1058
Effect of growth conditions on InAs nanoislands formation on Si(100) surface
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Samsonenko, YB Denisov, DV Busov, VM Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Effect of growth conditions on InAs nanoislands formation on Si(100) surface, CZEC J PHYS, 49(11), 1999, pp. 1547-1552
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