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Results: 1-9 |
Results: 9

Authors: Ma, ZQ Mohammadi, S Lu, LH Bhattacharya, P Katehi, LPB Alterovitz, SA Ponchak, GE
Citation: Zq. Ma et al., An X-band high-power amplifier using SiGe/Si HBT and lumped passive components, IEEE MICR W, 11(7), 2001, pp. 287-289

Authors: Ma, ZQ Bhattacharya, P Rieh, JS Ponchak, GE Alterovitz, SA Croke, ET
Citation: Zq. Ma et al., Reliability of microwave SiGe/Si heterojunction bipolar transistors, IEEE MICR W, 11(10), 2001, pp. 401-403

Authors: Ponchak, GE Chun, D Yook, JG Katehi, LPB
Citation: Ge. Ponchak et al., Experimental verification of the use of metal filled via hole fences for crosstalk control of microstrip lines in LTCC packages, IEEE T AD P, 24(1), 2001, pp. 76-80

Authors: Ponchak, GE Margomenos, A Katehi, LPB
Citation: Ge. Ponchak et al., Low-loss CPW on low-resistivity Si substrates with a micromachined polyimide interface layer for RFIC interconnects, IEEE MICR T, 49(5), 2001, pp. 866-870

Authors: Ma, Z Mohammadi, S Bhattacharya, P Katehi, LPB Alterovitz, SA Ponchak, GE Strohm, KM Luy, JF
Citation: Z. Ma et al., Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors, ELECTR LETT, 37(18), 2001, pp. 1140-1142

Authors: Ma, Z Mohammadi, S Bhattacharya, P Katehi, LPB Alterovitz, SA Ponchak, GE
Citation: Z. Ma et al., High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor, ELECTR LETT, 37(12), 2001, pp. 790-791

Authors: Ponchak, GE Chun, DH Yook, JG Katehi, LPB
Citation: Ge. Ponchak et al., The use of metal filled via holes for improving isolation in LTCC RF and wireless multichip packages, IEEE T AD P, 23(1), 2000, pp. 88-99

Authors: Tabib-Azar, M Akinwande, D Ponchak, GE LeClair, SR
Citation: M. Tabib-azar et al., Evanescent microwave probes on high-resistivity silicon and its application in characterization of semiconductors, REV SCI INS, 70(7), 1999, pp. 3083-3086

Authors: Ponchak, GE Matloubian, M Katehi, LPB
Citation: Ge. Ponchak et al., A measurement-based design equation for the attenuation of MMIC-compatiblecoplanar waveguides, IEEE MICR T, 47(2), 1999, pp. 241-243
Risultati: 1-9 |